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Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride

Published online by Cambridge University Press:  31 January 2011

Tao Wang ,
Wanqi Jie ,
Dongmei Zeng ,
Ge Yang ,
Yadong Xu ,
Weihua Liu  and
Jijun Zhang
Tao Wang*
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Dongmei Zeng
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Ge Yang
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Yadong Xu
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Weihua Liu
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Jijun Zhang
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Temperature-dependent photoluminescence (PL) spectra were measured to characterize the In-doped cadmium zinc telluride (CdZnTe, or CZT) crystals along the growth direction in the range of 10 to 60 K. High-resistivity CZT samples with 1.2 ppm In dopant at the tip and low-resistivity samples with 60 ppm In dopant at the heel have been assessed. The PL intensity quenching of D0X were fitted with two activation energies for high-resistivity CZT sample and only one activation energy for low-resistivity sample, respectively, suggesting different recombination mechanisms. The C-line was observed in the PL spectra of low-resistivity CZT sample and considered to the results of the isoelectronic complexes, InCd–VCd–InCd, while in high-resistivity CZT sample, shallow donor accepted pair (DAP) transition was identified, and thought to be related to InCd–VCd. The A-center in PL spectra was observed in low-resistivity CZT sample, which is indicative of more cadmium vacancies. It turns out that indium in low-resistivity CZT sample has not been doped as efficiently as in high-resistivity CZT sample because of the self-compensation.

Keywords

II-VIOptical propertiesLuminescence
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 5 , May 2008 , pp. 1389 - 1392
Copyright
Copyright © Materials Research Society 2008

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References

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