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Temperature and reactive etching effects on the microstructure of microwave plasma deposited diamond films

Published online by Cambridge University Press:  31 January 2011

Alan B. Harker  and
Jeffery F. DeNatale
Alan B. Harker
Affiliation:
Rockwell International Science Center, Thousand Oaks, California 91362
Jeffery F. DeNatale
Affiliation:
Rockwell International Science Center, Thousand Oaks, California 91362
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Abstract

In the microwave induced plasma deposition of diamond from methane-hydrogen-oxygen mixtures, the variables available for controlling the microstructure of the resulting films are the plasma composition and density, the substrate surface properties, and the temperature. It has been demonstrated that the competition between nucleation site formation and the rate of reactive plasma etching is the critical feature in the development of the film microstructure on silicon substrates. On diamond substrates, the favorable lattice match dominates and homo-epitaxial films are formed over a wide temperature range. Raman scattering studies also demonstrate that the reactive etching of the diamond surface by oxygen-containing species is critical to the removal of non-diamond carbon species over the temperature range 450–1050 °C.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 4 , April 1990 , pp. 818 - 823
Copyright
Copyright © Materials Research Society 1990

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References

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