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A TEM study of microstructures of YBa2Cu3O7−x thin films deposited on LaAlO3 by laser ablation

Published online by Cambridge University Press:  31 January 2011

S.N. Basu
Affiliation:
Department of Manufacturing Engineering, Boston University, Boston, Massachusetts 02215
A.H. Carim
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
T.E. Mitchell
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

The microstructures of YBa2Cu3O7−x thin films deposited by laser ablation on single crystal (001) LaAlO3 substrates have been investigated. The orientation of the YBa2Cu3O7−x layer next to the interface is found to be completely c-perpendicular, with a high degree of epitaxy between the film and the substrate. Misfit dislocations, with a periodic spacing of around 13 nm, are present at the interface. Two distinct interfacial structures are seen in these films. At a film thickness of around 400 nm, nucleation of c-parallel grains occurs, leading to a switchover from a c, and, and-perpendicular to a c-parallel microstructure. Amorphous particulates, ejected from the target during processing, lead to the formation of misoriented grains, giving rise to high-angle grain boundaries in the film.

Type
Articles
Copyright
Copyright © Materials Research Society 1991

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