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Synthesis of nanocrystalline aluminum–gallium nitride (AlxGa1−xN; x = 0.1 to 0.5) with oxide precursors via ammonolysis

Published online by Cambridge University Press:  03 March 2011

Sabine Faulhaber ,
Lars Loeffler ,
Jerry Hu ,
Edwin Kroke ,
Ralf Riedel  and
Fred F. Lange
Sabine Faulhaber*
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106 and Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Petersenstraße 23, 64287 Darmstadt, Germany
Lars Loeffler
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
Jerry Hu
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
Edwin Kroke
Affiliation:
Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Petersenstraße 23, 64287 Darmstadt, Germany
Ralf Riedel
Affiliation:
Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Petersenstraße 23, 64287 Darmstadt, Germany
Fred F. Lange
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Oxygen-containing precursor systems for the synthesis of mixed aluminum–gallium nitride (AlxGa1−xN with x = 0.1 to 0.5) through ammonolysis (heat treatment under ammonia) were evaluated. Three different precursor systems were studied: (i) aluminum isopropoxide (aluminum sec-butoxide)/gallium isopropoxide hydrolyzed with excess water and cross-linked with 1,6-hexanediol, (ii) aluminum–gallium hydroxide coprecipitated from aluminum–gallium nitrate solution, and (iii) spray-dried aluminum–gallium nitrate solutions. The specimens were heat-treated between 700 °C and 1100 °C and were characterized mainly by x-ray diffraction, nuclear magnetic resonance (NMR), and transmission electron microscopy (TEM). NMR was used to follow the conversion of oxygen to nitrogen bonds. TEM in combination with energy-dispersive x-ray spectroscopy was used to determine the solid-solution composition for separated particles. It is possible to synthesize a mixed hexagonal (Al,Ga)N with crystallite sizes in the range of ∼10 nm from all three precursor systems, but all products contained larger GaN crystals ranging from 20 nm (alkoxide-derived) to 200 nm (hydroxide-derived) and a fraction of untransformed Al–O bonds; e.g., (amorphous or γ-phase) Al2O3.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 10 , October 2003 , pp. 2350 - 2358
Copyright
Copyright © Materials Research Society 2003

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