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Synchrotron x-ray scattering study of SnO2 thin film grown on sapphire

Published online by Cambridge University Press:  31 January 2011

Gi-Hong Rue ,
Dae Hwang Yoo ,
Yoon Hwae Hwang  and
Hyung-Kook Kimb
Gi-Hong Rue
Affiliation:
Department of Physics and RCDAMP, Pusan National University, Pusan 609–735, Korea
Dae Hwang Yoo
Affiliation:
Department of Physics and RCDAMP, Pusan National University, Pusan 609–735, Korea
Yoon Hwae Hwang
Affiliation:
Department of Physics and RCDAMP, Pusan National University, Pusan 609–735, Korea
Hyung-Kook Kimb
Affiliation:
Department of Physics and RCDAMP, Pusan National University, Pusan 609–735, Korea
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Abstract

From synchrotron x-ray scattering measurements, it was found that epitaxially grown SnO2 film on sapphire has a variant structure with threefold symmetry with respect to the substrate and that the ultrathin interfacial layer is formed due to the lattice mismatch between SnO2 and Al2O3. The physical properties of the top surface, such as surface morphology, height profile, and roughness, were determined by atomic force microscopy. The height profiles of the film grown at 600 °C and room temperature revealed the asymmetrical and the ordinary symmetric Gaussian distributions, respectively. The difference originates from the dominant diffusion process at high substrate temperature.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 9 , September 2002 , pp. 2417 - 2422
Copyright
Copyright © Materials Research Society 2002

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