Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-10T19:03:26.586Z Has data issue: false hasContentIssue false
  • English
  • Français

Suppression of vigorous liquid Sn/Te reactions by Sn–Cu solder alloys

Published online by Cambridge University Press:  31 January 2011

Chien-Neng Liao  and
Ching-Hua Lee
Chien-Neng Liao*
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
Ching-Hua Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Reactions of molten Sn–xCu (x = 0.05 to 1.0) alloys with Te substrate at 250 °C were investigated. A dosage of 0.1 wt% Cu in Sn is found to be effective in suppressing the vigorous Sn/Te reaction by forming a thin CuTe at the solder/Te interface. The CuTe morphology changes from irregular clusters into a layered structure with increasing Cu content in Sn. With the same reaction time, the CuTe thickness increases proportionally to the square root of Cu content in Sn–Cu alloys, suggesting a diffusion-controlled growth for CuTe.

Keywords

Chemical reactionCompoundSoldering
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 12: Biomimetic and Bio-enabled Materials Science and Engineering , December 2008 , pp. 3303 - 3308
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Harman, T.C.: Multiple stage thermoelectric generation of power. J. Appl. Phys. 29, 1471 1958CrossRefGoogle Scholar
2Ioffe, A.F.: The revival of thermoelectricity. Sci. Am. 199, 31 1958Google Scholar
3Shafai, C., Brett, M.J.: Optimization of Bi2Te3 thin films for microintegrated Peltier heat pumps. J. Vac. Sci. Technol., A 15, 2798 1997Google Scholar
4Min, G., Rowe, D.M.: Experimental evaluation of prototype thermoelectric domestic-refrigerators. Appl. Energy 83, 133 2006CrossRefGoogle Scholar
5Goldsmid, H.J., Douglas, R.W.: The use of semiconductors in thermoelectric refrigeration. Br. J. Appl. Phys. 5, 386 1954Google Scholar
6Shilliday, T.S.: Performance of composite Peltier junctions of Bi2Te3. J. Appl. Phys. 28, 1035 1957Google Scholar
7Goldsmid, H.J., Sheard, A.R., Wright, D.A.: The performance of bismuth telluride thermojunctions. Br. J. Appl. Phys. 9, 365 1958Google Scholar
8Alieva, T.D., Barkhalov, B.Sh., Abdinov, D.Sh.: Structures and electrical-properties of interfaces between Bi0.5Sb1.5Te3 (Bi2Te2.7Se0.3) crystals and some alloys. Inorg. Mater. 31, 178 1995Google Scholar
9Liao, C.N., Lee, C.H., Chen, W.J.: Effect of interfacial compound formation on contact resistivity of soldered junctions between bismuth telluride-based thermoelements and copper. Electrochem. Solid-State Lett. 10, 23 2007CrossRefGoogle Scholar
10Chen, S.W., Chiu, C.N.: Unusual cruciform pattern interfacial reactions in Sn/Te couples. Scr. Mater. 56, 97 2007Google Scholar
11Huang, M.L., Loeher, T., Ostmann, A., Reichi, H.: Role of Cu in dissolution kinetics of Cu metallization in molten Sn-based solders. Appl. Phys. Lett. 86, 181908 2005Google Scholar
12Hsu, S.C., Wang, S.J., Liu, C.Y.: Effect of Cu content on interfacial reactions between Sn(Cu) alloys and Ni/Ti thin-film metallization. J. Electron. Mater. 32, 1214 2003CrossRefGoogle Scholar
13Huheey, J.E., Keiter, E.A., Keiter, R.L.: Inorganic Chemistry: Principles of Structure and Reactivity 4th ed.HarperCollins College New York 1993 188–189Google Scholar
14Yao, J.H., Elder, K.R., Guo, H., Grant, M.: Theory and simulation of Ostwald ripening. Phys. Rev. B 47, 14110 1993Google Scholar
15Cahn, R.W., Haasen, P.: Physical Metallurgy 3rd rev. North-Holland Physics New York 1983 987–994Google Scholar
16Ghandhi, S.K.: VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd ed. John Wiley & Sons New York 1994 458–461Google Scholar