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Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

Published online by Cambridge University Press:  31 January 2011

Supapan Visitserngtrakul ,
Stephen J. Krause  and
John C. Barry
Supapan Visitserngtrakul
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, Arizona 85287
Stephen J. Krause
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, Arizona 85287
John C. Barry
Affiliation:
Electron Microscope Centre, University of Queensland, St. Lucia, Brisbane, Queensland 4067, Australia
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Abstract

Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm−2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 4 , April 1991 , pp. 792 - 795
Copyright
Copyright © Materials Research Society 1991

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