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Stabilizing the Tb-based 214 cuprate by partial Pd substitution

Published online by Cambridge University Press:  15 May 2018

Yuzki M. Oey Open the ORCID record for Yuzki M. Oey [Opens in a new window] ,
James Eujin Park ,
Jing Tao ,
Elizabeth M. Carnicom ,
Tai Kong ,
Marisa B. Sanders  and
R. J. Cava
Yuzki M. Oey*
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA
James Eujin Park
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA
Jing Tao
Affiliation:
Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, USA
Elizabeth M. Carnicom
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA
Tai Kong
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA
Marisa B. Sanders
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA
R. J. Cava*
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

Previously known to form only under high pressure synthetic conditions, here we report that the T′-type 214-structure cuprate based on the rare earth atom Tb is stabilized for ambient pressure synthesis through partial substitution of Pd for Cu. The new material is obtained in purest form for mixtures of nominal composition Tb1.96Cu0.8Pd0.2O4. The refined formula, in orthorhombic space group Pbca, with a = 5.5117(1) Å, b = 5.5088(1) Å, and c = 11.8818(1) Å, is Tb2Cu0.83Pd0.17O4. An incommensurate structural modulation is seen along the a axis by electron diffraction and high resolution imaging. Magnetic susceptibility measurements reveal long-range antiferromagnetic ordering at 7.9 K, with a less pronounced feature at 95 K; a magnetic moment reorientation transition is observed to onset at a field of approximately 1.1 T at 3 K. The material is an n-type semiconductor.

Keywords

crystallographic structurelanthanidesuperconducting
Type
Article
Information
Journal of Materials Research , Volume 33 , Issue 11 , 13 June 2018 , pp. 1690 - 1697
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Copyright
Copyright © Materials Research Society 2018 

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References

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