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Sputtered WSix for micromechanical structures

Published online by Cambridge University Press:  03 March 2011

Muh-Ling Ger  and
Richard B. Brown
Muh-Ling Ger*
Affiliation:
Department of Electrical Engineering and Computer Science Center for Integrated Sensors and Circuits, University of Michigan, Ann Arbor, Michigan 48109-2122
Richard B. Brown
Affiliation:
Department of Electrical Engineering and Computer Science Center for Integrated Sensors and Circuits, University of Michigan, Ann Arbor, Michigan 48109-2122
*
a)Present address: Motorola Inc. Advanced Custom Technologies. Semiconductor Products Sector, P.O. Box 20906, Phoenix, Arizona 85036-0906.
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Abstract

Tungsten silicide (WSix) thin tilms have been investigated for use as integrated circuit interconnect and self-aligned MESFET (metal-semiconductor field-effect transistor) gates because of their low resistivity and thermal and chemical stability. These same characteristics make them interesting materials for prospective use in micromechanical structures. However, little information on residual stresses, elastic moduli, or other micromechanical properties has been available for refractory metal silicide thin films. This paper presents the morphology and stress characteristics of cosputtered WSix thin films, including crystal structure variations and orientation-dependent stresses, as a function of the deposition pressure. The compositions of WSix thin films were analyzed by Rutherford backscattering spectrometry (RBS). The biaxial elastic modulus and thermal coefficient of expansion were found for the sputtered films. Stress-measurement methods and annealing are discussed. Released diaphragms of different sizes and shapes, having controlled residual stress, have been fabricated.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 7 , July 1995 , pp. 1710 - 1720
Copyright
Copyright © Materials Research Society 1995

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References

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