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Solid/solid interfacial reactions between Sn–0.7 wt% Cu and Ni–7 wt% V

Published online by Cambridge University Press:  31 January 2011

Chih-chi Chen ,
Sinn-wen Chen  and
Chih-horng Chang
Chih-chi Chen
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 300, Republic of China
Sinn-wen Chen*
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 300, Republic of China
Chih-horng Chang
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 300, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Sn–0.7 wt% Cu alloy is an important Pb-free solder, and Ni–7 wt% V is the major diffusion barrier layer material of flip chip technology. Reactions at the Sn–0.7 wt% Cu/Ni–7 wt% V interface are examined at 160, 180, and 210 °C. Only the Cu6Sn5 phase is formed in the Sn–0.7 wt% Cu/Ni–7 wt% V couple reacted at 160 and 180 °C; however, in addition to the Cu6Sn5 and Ni3Sn4 phases, a quaternary Q phase is formed in the Sn–0.7 wt% Cu/Ni–7 wt% V couple reacted at 210 °C. The Q phase is a mixture of nanocrystalline Ni3Sn4 phase and an amorphous phase. With longer reaction time at 210 °C in the Ni–V/Q/Sn–Cu couple where the Q phase is in direct contact with solder, the Ni3Sn4 phase nucleates inside the preformed Q phase, and the alternating layer phenomenon Ni–V/Q/Ni3Sn4/Q/Ni3Sn4/Cu6Sn5/Sn–Cu is observed. The interesting solid state amorphization and alternating layer phenomena at 210 °C are primarily caused by the fact that Sn and Cu are fast diffusing species, while V is relatively immobile.

Keywords

Phase transformationSolderingV
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 7 , July 2008 , pp. 1895 - 1901
Copyright
Copyright © Materials Research Society 2008

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