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Self-heating of silicon microwires: Crystallization and thermoelectric effects

Published online by Cambridge University Press:  18 April 2011

Gokhan Bakan ,
Niaz Khan ,
Adam Cywar ,
Kadir Cil ,
Mustafa Akbulut ,
Ali Gokirmak  and
Helena Silva
Gokhan Bakan*
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269
Niaz Khan
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269
Adam Cywar
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269
Kadir Cil
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269
Mustafa Akbulut
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269
Ali Gokirmak
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269
Helena Silva*
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

We describe experiments on self-heating and melting of nanocrystalline silicon microwires using single high-amplitude microsecond voltage pulses, which result in growth of large single-crystal domains upon resolidification. Extremely high current densities (>20 MA/cm2) and consequent high temperatures (1700 K) and temperature gradients (1 K/nm) along the microwires give rise to strong thermoelectric effects. The thermoelectric effects are characterized through capture and analysis of light emission from the self-heated wires biased with lower magnitude direct current/alternating current voltages. The hottest spot on the wires consistently appears closer to the lower potential end for n-type microwires and to the higher potential end for p-type microwires. The experimental light emission profiles are used to verify the mathematical models and material parameters used for the simulations. Good agreement between experimental and simulated profiles indicates that these models can be used to predict and design optimum geometry and bias conditions for current-induced crystallization of microstructures.

Keywords

SiCrystal growthThermoelectricity
Type
Invited Feature Paper
Information
Journal of Materials Research , Volume 26 , Issue 9 , 14 May 2011 , pp. 1061 - 1071
Copyright
Copyright © Materials Research Society 2011

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