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Scanning and transmission electron microscopies of single-crystal silicon microworn/machined using atomic force microscopy

Published online by Cambridge University Press:  31 January 2011

Vilas N. Koinkar  and
Bharat Bhushan
Vilas N. Koinkar
Affiliation:
Computer Microtribology and Contamination Laboratory, 206 West 18th Avenue, The Ohio State University, Columbus, Ohio 43210–1107
Bharat Bhushan*
Affiliation:
Computer Microtribology and Contamination Laboratory, 206 West 18th Avenue, The Ohio State University, Columbus, Ohio 43210–1107
*
b)Author to whom all correspondence should be sent.
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Abstract

Atomic force microscopy (AFM) is commonly used for microwear/machining studies of materials at very light loads. To understand material removal mechanism on the microscale, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies were conducted on the microworn/machined single-crystal silicon. SEM studies of micromachined single-crystal silicon indicate that at light loads material is removed by ploughing. Fine particulate debris is observed at light loads. At higher loads, cutting type and ribbon-like debris were observed. This debris is loose and can be easily removed by scanning with an AFM tip. TEM images of a wear mark generated at 40 μN show bend contours in and around the wear mark, suggesting that there are residual stresses. Dislocations, cracks, or any special features were not observed inside or outside wear marks using plan-view TEM. Therefore, material is mostly removed in a brittle manner or by chipping without major dislocation activity, crack formation, and phase transformation at the surface. However, presence of ribbon-like debris suggests some plastic deformation as well.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 12 , December 1997 , pp. 3219 - 3224
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Semiconductor Sensors, edited by Sze, S. M. (John Wiley, New York, 1994).Google Scholar
2.Gardner, J. W., Microsensors: Principles and Applications (John Wiley, New York, 1994).Google Scholar
3. Bhushan, B. and Venkatesan, S., Adv. Info. Storage Syst. 5, 211–239 (1993).Google Scholar
4.Leu, H. J. and Scattergood, R. O., J. Mater. Sci 23, 3006–3014 (1988).CrossRefGoogle Scholar
5.Lim, D. and Danyluk, S., J. Mater. Sci. 23, 2607–2612 (1988).Google Scholar
6.Callahan, D. and Morris, J. C., J. Mater. Res. 7, 1612–1617 (1992).CrossRefGoogle Scholar
7.Morris, J. C. and Callahan, D. L., J. Mater. Res. 9, 2907–2913 (1994).Google Scholar
8.Puttick, K. E., Whitmore, L. C., Chao, C. L., and Gee, A. E., Philos. Mag. A 69, 91–103 (1994).Google Scholar
9.Belak, J., Boercker, D. B., and Stowers, I. F., MRS Bull. 93, 55–60 (1993).CrossRefGoogle Scholar
10.Bhushan, B., Handbook of Micro/Nanotribology (CRC Press, Boca Raton, FL, 1995).Google Scholar
11.Hokkirigawa, K. and Kato, K., Tribology Int. 21, 51–57 (1988).CrossRefGoogle Scholar
12.Chiou, Y. C. and Kato, K., J. JSLE Int. Ed. 9, 11–16 (1988).Google Scholar
13.Bhushan, B., Appl. Mech. Rev. 49, 275–298 (1996).CrossRefGoogle Scholar
14.Edington, J. W., Practical Electron Microscopy in Materials Sciences (TechBooks, Herndon, VA, 1976).Google Scholar
15.Scott, C. G. and Danyluk, S., Wear 152, 183–185 (1992).CrossRefGoogle Scholar