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Reversed domain configuration behavior in BaMgF4 ferroelectric crystal

Published online by Cambridge University Press:  03 March 2011

Huarong Zeng ,
Kiyoshi Shimamura ,
Encarnacion G. Villora ,
Shunji Takekawa  and
Kenji Kitamura
Huarong Zeng*
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Kiyoshi Shimamura
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Encarnacion G. Villora
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Shunji Takekawa
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Kenji Kitamura
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Piezoresponse mode atomic force microscopy was used to induce a dynamic polarization reversal process and to characterize domain configuration behavior in BaMgF4 single crystal. Triangular reversed domains observed on the polar and non-polar surface demonstrate a sideways domain wall motion mechanism prevailing in the switching process of the bulk BaMgF4 crystal. The domain wall bowing phenomenon due to the strong pinning of the crystal defects was first visualized in the piezoresponse image of the engineering domain pattern in BaMgF4 crystal.

Keywords

FerroelectricFerroelectricityScanning-probe microscopy (SPM)
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 1072 - 1076
Copyright
Copyright © Materials Research Society 2007

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References

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