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Response analysis on AlGaN metal–semiconductor–metal photodetectors in a perspective of experiment and theory and the persistent photoconductivity effect

Published online by Cambridge University Press:  24 August 2018

Yiming Zhao Open the ORCID record for Yiming Zhao [Opens in a new window]  and
William R. Donaldson
Yiming Zhao*
Affiliation:
Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623-1299, USA
William R. Donaldson
Affiliation:
Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623-1299, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Aluminum gallium nitride (AlGaN) metal–semiconductor–metal photodetectors were successfully fabricated with different contact materials and structures and were tested with ultrafast lasers. The experimental results were compared with the finite element simulations based on APSYS and showed consistent trend with respect to the device I–V properties and response behaviors. Persistent photoconductivity (PPC) was observed for devices with both gold and aluminum contacts and various structures, and the decay time can be longer than 10 ms. The response time and responsivity were found to be affected by the bias voltage, operating temperature, and incident power. The mechanism behind the long decay time is analyzed from the perspective of the materials properties and factors influencing the decay time are examined. The nature of the metal–semiconductor contact is studied to help understand the PPC effect, and the contact showed ohmic-like behavior.

Keywords

photodetectorphotoresponseohmic contactpersistent photoconductivity
Type
Invited Paper
Information
Journal of Materials Research , Volume 33 , Issue 17 , 14 September 2018 , pp. 2627 - 2636
Copyright
Copyright © Materials Research Society 2018 

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