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Relaxation phenomena in evaporated amorphous silicon films

Published online by Cambridge University Press:  31 January 2011

R. R. De Avillez ,
L. A. Clevenger  and
C. V. Thompson
R. R. De Avillez
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
L. A. Clevenger
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

Power compensated differential scanning calorimetry, transmission electron microscopy, and density measurements were used to characterize relaxation phenomena associated with structural transitions in electron beam evaporated amorphous silicon thin films. Two transitions were observed in the amorphous films upon heating: a broad exothermic process below 600 K and an endothermic step beginning at 600 K. The broad exothermic process is due to the relief of bond distortions. The endothermic step is related to homogenization and densification of the structure of the amorphous silicon.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 4 , Issue 5 , October 1989 , pp. 1057 - 1059
Copyright
Copyright © Materials Research Society 1989

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References

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