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Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Published online by Cambridge University Press:  23 September 2013

Leif I. Johansson  and
Chariya Virojanadara
Leif I. Johansson*
Affiliation:
Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
Chariya Virojanadara*
Affiliation:
Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

Epitaxial graphene of uniform thickness prepared on SiC is of great interest for various applications. On the Si-face, large area uniformity has been achieved, and there is a general consensus about the graphene properties. A similar uniformity has yet not been demonstrated on the C-face where the graphene has been claimed to be fundamentally different. A rotational disorder between adjacent graphene layers has been reported and suggested to explain why multilayer C-face graphene show the π-band characteristic of monolayer graphene. Utilizing low energy electron microscopy, x-ray photoelectron electron microscopy, low energy electron diffraction, and photoelectron spectroscopy, we investigated the properties of C-face graphene prepared by sublimation growth. We observe the formation of micrometer-sized crystallographic grains of multilayer graphene and no rotational disorder between adjacent layers within a grain. Adjacent grains are in general found to have different azimuthal orientations. Effects on C-face graphene by hydrogen treatment and Na exposure were also investigated and are reported. Why multilayer C-face graphene exhibits single layer electronic properties is still a puzzle, however.

Type
Invited Papers
Information
Journal of Materials Research , Volume 29 , Issue 3: Focus Issue: Graphene and Beyond , 14 February 2014 , pp. 426 - 438
Copyright
Copyright © Materials Research Society 2013 

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References

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