Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-09T16:22:16.722Z Has data issue: false hasContentIssue false

Processing effects on the composition and dielectric properties of hydrothermally derived BaxSr(1−x)TiO3 thin films

Published online by Cambridge University Press:  31 January 2011

Mark A. McCormick
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907-1289
Ryan K. Roeder
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907-1289
Elliott B. Slamovich
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907-1289
Get access

Abstract

Polycrystalline BaxSr(1−x)TiO3 (BST) thin films were processed on Pt-coated glass substrates at temperatures below 100 °C by reacting TiO2 films in alkaline solutions containing Ba2+ and/or Sr2+. The TiO2 was deposited by spin-casting a titanium metalorganic precursor onto Pt-coated glass substrates, followed by pyrolysis in air at 400 °C. Film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The BST thin films had dielectric constants ranging from 100 to 185 and dielectric loss values below 0.25. Capacitance–voltage and current–voltage relationships were examined to determine the effect of phase stoichiometry and processing route on dielectric properties.

Type
Articles
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Auciello, O., Integr. Ferroelectr. 15, 211 (1997).CrossRefGoogle Scholar
2.Scott, J.F., Annu. Rev. Mater. Sci. 28, 79 (1998).CrossRefGoogle Scholar
3.Tahan, D.M., Safari, A., and Klein, L.C., J. Am. Ceram. Soc. 79, 1593 (1996).CrossRefGoogle Scholar
4.Hennings, D., Int. J. High Technol. Ceram. 3, 91 (1987).CrossRefGoogle Scholar
5.Polla, D.L. and Francis, L.F., MRS Bull. July, 59 (1996).CrossRefGoogle Scholar
6.Beratan, H., Hanson, C., and Meissner, G., SPIE Proc. 2274, 147 (1994).CrossRefGoogle Scholar
7.Jin, F., Auner, G.W., Naik, R., Schubring, N.W., Mantese, J.V., Catalan, A.B., and Micheli, A.L., Appl. Phys. Lett. 73, 2838 (1998).CrossRefGoogle Scholar
8.Vendik, O.G., Hollmann, E.K., Kozyrev, A.B., and Prudan, A.M., Supercond, J.. 12, 325 (1999).Google Scholar
9.Kotecki, D.E., Baniecki, J., Shen, H., Laibowitz, R., Saenger, K., Lian, J., Shaw, T., Athavale, S., Cabral, C., Duncombe, P., Gutsche, M., Kunkel, G., Park, Y., Wang, Y., and Wise, R., IBM J. Res. Develop. 43, 367 (1999).CrossRefGoogle Scholar
10.Yoshimura, T., Fujimura, N., and Ito, T., J. Cryst. Growth 174, 790 (1997).CrossRefGoogle Scholar
11.Xu, J.J., Shaikh, A.S., and Vest, R.W., IEEE Trans. Ultrason. Ferroelectr. Freq. Control 36, 307 (1989).CrossRefGoogle Scholar
12.Kullmer, R., Appl. Phys. A, 65, 273 (1997).CrossRefGoogle Scholar
13.Sharma, H.B. and Mansingh, A., J. Phys. D: Appl. Phys. 31, 1527 (1998).CrossRefGoogle Scholar
14.Lencka, M.M. and Riman, R.E., Chem. Mater. 5, 61 (1993).CrossRefGoogle Scholar
15.Slamovich, E.B. and Aksay, I.A., in Better Ceramics Through Chemistry VI, edited by Cheetham, A.K., Brinker, C.J., Mecartney, M.L., and Sanchez, C.. (Mater. Res. Soc. Symp. Proc. 346, Pittsburgh, PA, 1994), p. 6368.Google Scholar
16.Basca, R., Ravindranathan, P., and Dougherty, J., J. Mater. Res. 7, 423 (1992).Google Scholar
17.Eckert, J., Hung-Houston, C., Gersten, B., Lencka, M., and Riman, R., J. Am. Ceram. Soc. 79, 2929 (1996).CrossRefGoogle Scholar
18.Yoshimura, M., Suchanek, W., Watanabe, T., and Sakurai, B., J. Mater. Res. 13, 875 (1998).CrossRefGoogle Scholar
19.Roeder, R.K. and Slamovich, E.B., J. Am. Ceram. Soc. 82, 1665 (1999).CrossRefGoogle Scholar
20.Shaikh, A.S. and Vest, G.M., J. Am. Ceram. Soc., 69, 682 (1986).CrossRefGoogle Scholar
21.Roeder, R.K. and Slamovich, E.B., Ceram. Trans. 83, 375 (1998).Google Scholar
22.Roeder, R.K. and Slamovich, E.B., J. Mater. Res. 14, 2364 (1999).CrossRefGoogle Scholar
23.Dietz, G.W., Antpöhler, W., Klee, M., and Waser, R., J. Appl. Phys. 78, 6113 (1995).CrossRefGoogle Scholar
24.Software manual for Siemens DIFFRAC-AT v.3.1 and Profile Fitting Program v.1.5 (Siemens Analytical X-Ray Instruments, Cherry Hill, NJ, 1988).Google Scholar
25.Dietz, G.W., Schumacher, M., Waser, R., Strieffer, S.K., Basceri, C., and Kingon, A.I., J. Appl. Phys. 82, 2359 (1997).CrossRefGoogle Scholar
26.Chien, A.T., Xu, X., Kim, J.H., Sachleben, J., Speck, J.S., and Lange, F.F., J. Mater. Res. 14, 3330 (1999).CrossRefGoogle Scholar
27.Hennings, D. and Schreinemacher, S., J. Eur. Ceram. Soc. 9, 41 (1992).CrossRefGoogle Scholar
28.Kajiyoshi, K., Yoshimura, M., Hamaji, Y., Tomono, K., and Kasanami, T., J. Mater. Res. 11, 169 (1996).CrossRefGoogle Scholar
29.Syamaprasad, U., Galgali, R.K., and Mohanty, B.C., Mater. Lett. 8, 36 (1989).CrossRefGoogle Scholar
30.Frey, M.H., Xu, Z., Han, P., and Payne, D.A., Ferroelectrics 206–207, 337 (1998).CrossRefGoogle Scholar
31.Mohammed, M.S., Naik, R., Mantese, J., Schubring, N., Micheli, A., and Catalan, A., J. Mater. Res. 11, 2588 (1996).CrossRefGoogle Scholar
32.Peng, C.J. and Krupanidhi, S.B., in Proceedings of the 9th IEEE International Symposium on Applications of Ferroelectrics (IEEE, Piscataway, NJ, 1994), p. 460.Google Scholar
33.Kato, Y., Yabuta, H., Sone, S., Yamaguchi, H., Iizuka, T., Yamamichi, S., Lesaicherre, P-Y., Nishimoto, S., and Yoshida, Y. in Ferroelectric Thin Films V, edited by Desu, S.B., Ramesh, R., Tuttle, B.A., Jones, R.E., and Yoo, I.K.. (Mater. Res. Soc. Symp. Proc. 433, Pittsburgh, PA, 1996), p. 38.Google Scholar
34.Krupanidhi, S.B. and Peng, C.J., Thin Solid Films 305, 144 (1997).CrossRefGoogle Scholar
35.Basca, R.R., Dougherty, J.P., and Pillone, L.J., Appl. Phys. Lett. 63, 1053 (1993).Google Scholar
36.Kajiyoshi, K., Sakabe, Y., and Yoshimura, M., Jpn. J. Appl. Phys. 36, 1209 (1997).CrossRefGoogle Scholar
37.Outzourhit, A., Trefny, U., Kito, T., and Yarar, B., J. Mater. Res. 10, 1411 (1995).CrossRefGoogle Scholar
38.Outzourhit, A., Trefny, J.U., Kito, T., Yarar, B., Naziripur, A., and Hermann, A.M., Thin Solid Films 259, 218 (1995).CrossRefGoogle Scholar
39.Lindner, J., Weiss, F., Senateur, J.P., Galindo, V., Haessler, W., Weihnacht, M., Santiso, J., and Figueras, A., J. Eur. Ceram. Soc. 19, 1435 (1999).CrossRefGoogle Scholar
40.Sengupta, S., Vijay, D.P., and Desu, S.B., in Ferroelectric Thin Films IV, edited by Desu, S.B., Tuttle, B.A., Ramesh, R., and Shiosaki, T. (Mater. Res. Soc. Symp. Proc. 361, Pittsburgh, PA, 1995), p. 545550.Google Scholar
41.Basceri, C., Streiffer, S.K., Kingon, A.I., and Waser, R., J. Appl. Phys. 82, 2497 (1997).CrossRefGoogle Scholar
42.Kim, J., Kwun, S., and Yoon, J., in Proceedings of the 9th IEEE International Symposium on Applications of Ferroelectrics (IEEE, Piscataway, NJ, 1994), p. 422.Google Scholar
43.Tahan, D., Safari, A., and Klein, L.C., in Proceedings of the 9th IEEE International Symposium on Applications of Ferroelectrics (IEEE, Piscataway, NJ, 1994), p. 427.Google Scholar
44.Johnson, K.M., J. Appl. Phys. 33, 2826 (1962).CrossRefGoogle Scholar
45.Merz, W.J., Phys. Rev. 76, 1221 (1949).CrossRefGoogle Scholar
46.Liou, J. and Chiou, B., J. Am. Ceram. Soc. 80, 3093 (1997).CrossRefGoogle Scholar
47.Martirena, H.T. and Burfoot, J.C., J. Phys. C: Solid State Phys. 7, 3182 (1974).CrossRefGoogle Scholar
48.Dietz, G.W. and Waser, R., Thin Solid Films 299, 53 (1997).CrossRefGoogle Scholar
49.Sze, S.M., Physics of Semiconductor Devices (John Wiley & Sons, Inc., New York, 1969).Google Scholar
50.Formenko, V.S., Handbook of Thermionic Properties, edited by Samsonov, G.V. (Plenum Press Data Division, New York, 1966).CrossRefGoogle Scholar
51.Hafid, L., Godefroy, G., El Idrissi, A., and Michel-Calendini, F., Solid State Commun. 66, 841 (1988).CrossRefGoogle Scholar
52.Henrich, V.E., Dresselhaus, G., and Zeiger, H.J., Phys. Rev. B 17, 4908 (1978).CrossRefGoogle Scholar
53.Kwak, D.H., Jang, B.T., Cha, S.Y., Lee, J.S., and Lee, H.C., Integr. Ferroelectr. 17, 179 (1997).CrossRefGoogle Scholar
54.Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Saenger, K.L., Duncombe, P.R., Cabral, C., Kotecki, D.E., Shen, H., Lian, J., and Ma, Q.Y., J. Eur. Ceram. Soc. 19, 1457 (1999).CrossRefGoogle Scholar
55.Stolichnov, I., Tagantsev, A.K., Colla, E.L., and Setter, N., Appl. Phys. Lett. 73, 1361 (1998).CrossRefGoogle Scholar