Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-04T19:49:38.243Z Has data issue: false hasContentIssue false

Preparation and growth mechanism of a-axis-oriented YBa2Cu3O7-δ films by laser metal-organic chemical vapor deposition

Published online by Cambridge University Press:  03 March 2011

Takahisa Ushida
Affiliation:
Superconductivity Research Laboratory, Nagoya Division, International Superconductivity Technology Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456, Japan
Hiroyuki Higa
Affiliation:
Superconductivity Research Laboratory, Nagoya Division, International Superconductivity Technology Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456, Japan
Kazutoshi Higashiyama
Affiliation:
Superconductivity Research Laboratory, Nagoya Division, International Superconductivity Technology Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456, Japan
Izumi Hirabayashi
Affiliation:
Superconductivity Research Laboratory, Nagoya Division, International Superconductivity Technology Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456, Japan
Get access

Abstract

Recently we have found a very effective method for controlling the orientation of YBCO films by metal-organic chemical vapor deposition (MOCVD) using uv laser irradiation during deposition onto a MgO(100) substrate. The irradiated part was strongly a-axis-oriented normal to the surface of the substrate for films prepared at 650-700 °C, whereas the unirradiated parts showed c-axis or (110) orientation. This phenomenon occurs not only on MgO(100) substrates but also on other substrates. We obtained a Tc above 81 K on the a-axis oriented part. The critical current density was over 105 A/cm2 at 4.2 K and O T. The surface morphology depends on the laser power density and the repetition rate. A high degree of the a-axis orientation is obtained only by using uv light during deposition of YBCO film. IR or a visible laser causes only surface melting and the destruction of film orientation. We propose that the nuclei for a-axis orientation are formed by the aggregation of Ba caused by uv laser irradiation near the film surface.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Eom, C. B., Marshall, A. F., Laderman, S. S., Jacowitz, R. D., and Geballe, T. H., Science 249, 1549 (1990).Google Scholar
2Linker, G., Xi, X. X., Meyer, O., Li, Q., and Geerk, J., Solid State Commun. 69, 249 (1989).CrossRefGoogle Scholar
3Inam, A., Rogers, C. T., Ramesh, R., Remsching, K., Farrow, L., Hart, D., and Venkatesan, T., Appl. Phys. Lett. 57, 2484 (1990).CrossRefGoogle Scholar
4Matsuda, M., Shoji, A., Matsuhashi, H., and Koyanagi, M., Proc. 4th Int. Symp. Superconductivity (ISS'91), Tokyo, 1991 (Springer-Verlag, Tokyo, 1992), p. 719.CrossRefGoogle Scholar
5Worthington, T. K., Gallagher, W. J., and Dinger, T. R., Phys. Rev. Lett. 59, 1160 (1987).CrossRefGoogle Scholar
6Gupta, A., Koren, G., Baseman, R. J., Segmüller, A., and Holber, W., Physica C 162–164, 127 (1989).Google Scholar
7Ushida, T., Higa, H., Higashiyama, K., Hirabayashi, I., and Tanaka, S., Appl. Phys. Lett. 59, 860 (1991).Google Scholar
8Ushida, T., Higashiyama, K., Hirabayashi, I., and Tanaka, S., Supercond. Sci. Technol. 4, 445 (1991).Google Scholar
9Tsuruoka, T., Kawasaki, R., and Abe, H., Jpn. J. Appl. Phys. 28, 1800 (1989).Google Scholar
10Ohnishi, H., Harima, H., Kusakabe, Y., Kobayashi, M., Hoshinouchi, S., and Tachibana, K., Jpn. J. Appl. Phys. 29, 2041 (1990).CrossRefGoogle Scholar
11Labalestier, D. C., Babcock, S. E., Cai, X. Y., Field, M. B., Gao, Y., Heinig, N. F., Kaiser, D. L., Merkle, K., Williams, L. K., and Zhang, N., Physica C 185–189, 315 (1991).CrossRefGoogle Scholar
12Kulik, I. O. and Omel'yanchuk, A. N., Sov. J. Low Temp. Phys. 3, 459 (1977).Google Scholar
13Hwang, D. M., Ravi, T. S., Ramesh, R., Chan, S-W., Chen, C. Y., Nazar, L., Wu, X. D., Inam, A., and Venkatesan, T., Appl. Phys. Lett. 57, 1690 (1990).CrossRefGoogle Scholar
14Balluffi, R. W., Brokman, A., and King, A. H., Acta Metall. 30, 1453 (1982).CrossRefGoogle Scholar
15Nakamiya, T., Ebihara, K., John, P. K., and Tong, B. Y., in Laser Ablation for Materials Synthesis, edited by Paine, D. C. and Bravman, J. C. (Mater. Res. Soc. Symp. Proc. 191, Pittsburgh, PA, 1990), p. 109.Google Scholar
16Yamane, H., Hase, M., Hirai, T., Watanabe, K., Kobayashi, N., Kurosawa, H., and Muto, Y., Proc. 3rd Int. Symp. Super conductivity (ISS'90), Sendai, 1990 (Springer-Verlag, Tokyo, 1991), p. 973.Google Scholar
17Higa, H., Maeda, M., Suzuki, I., Ushida, T., Hirabayashi, K., Hirabayashi, I., and Tanaka, S., Physica C 192, 202 (1992).CrossRefGoogle Scholar
18Harima, H., Ohnishi, H., Hanaoka, K., Tachibana, K., and Goto, Y., Jpn. J. Appl. Phys. 30, 1946 (1991).Google Scholar
19Takahashi, H., Aoki, Y., Usui, T., Fromknecht, R., Morishita, T., and Tanaka, S., Physica C 175, 381 (1991).CrossRefGoogle Scholar
20Nagaya, S., Miyajima, M., Hirabayashi, I., Shiohara, Y., and Tanaka, S., IEEE Trans. Magn. 27, 1487 (1990).CrossRefGoogle Scholar
21Sasaki, M., Kawakyu, Y., and Mashita, M., Jpn. J. Appl. Phys. 28, L131 (1989).CrossRefGoogle Scholar