Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-24T09:30:57.244Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

Published online by Cambridge University Press:  31 January 2011

Deuk Ho Yeon ,
Bhaskar Chandra Mohanty ,
Yeon Hwa Jo  and
Yong Soo Cho
Yong Soo Cho*
Affiliation:
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

An effective way to prepare a robust CuInSe2 (CIS) target for subsequent vapor depositions of thin films is suggested in this work. The technique involves addition of excess Se to presynthesized CIS powder followed by cold pressing and sintering at a temperature as low as 300 °C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300 °C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a hole concentration of ˜3 × 1019 cm−3 and a Hall mobility of ˜2 cm2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 × 10−1 to ˜7.5 × 108 Ω·cm, which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

Keywords

Electrical PropertiesHall EffectThin Film
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 10 , October 2010 , pp. 1936 - 1942
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Rockett, A., Birkmire, R.W.CuInSe2 for photovoltaic applications. J. Appl. Phys. 70, R81 (1991)CrossRefGoogle Scholar
2.Kaelin, M., Rudmann, D., Tiwari, A.N.Low cost processing of CIGS thin film solar cells. Sol. Energy 77, 749 (2004)CrossRefGoogle Scholar
3.Hermann, A.N., Gonzalez, C., Ramakrishnan, P.A., Bazar, D., Popa, N., Rice, P., Marshall, C.H., Hilfiker, J.N., Tiwald, T., Sebastian, P.J., Calixto, M.E., Bhattacharya, R.N.Fundamental studies on large area Cu(In,Ga)Se2 films for high efficiency solar cells. Sol. Energy Mater. Sol. Cells 70, 345 (2001)Google Scholar
4.Schock, H.W., Noufi, R.CIGS-based solar cells for the next millennium. Prog. Photovoltaics Res. Appl. 8, 155 (2000)3.0.CO;2-Q>CrossRefGoogle Scholar
5.Dittrich, H., Klose, M., Brieger, M., Schaffler, R., Schock, H.W.Complex semiconductor compound targets for pulsed laser deposition. Mater. Sci. Forum 173, 129 (1995)Google Scholar
6.Dhere, N.G.Present status and future prospects of CIGSS thin film solar cells. Sol. Energy Mater. Sol. Cells 90, 2181 (2006)CrossRefGoogle Scholar
7.Caballero, R., Guillen, C.CuInSe2 formation by selenization of sequentially evaporated metallic layers. Sol. Energy Mater. Sol. Cells 86, 1 (2005)CrossRefGoogle Scholar
8.Levoska, J., Hill, A.E., Leppavuori, S., Kusmartseve, O., Tomlinson, R.D., Pilkington, R.D.Laser ablation deposition of CuInSe2 thin films on silicon and fused silica. Phys. Scr. T. 54, 244 (1994)CrossRefGoogle Scholar
9.Suryanarayana, C., Ivanov, E., Noufi, R., Contreras, M.A., Moore, J.J.Synthesis and processing of a Cu–In–Ga–Se sputtering target. Thin Solid Films 332, 340 (1998)CrossRefGoogle Scholar
10.Gremenok, V.F., Zaretskaya, E.P., Bodnar, I.V., Victorov, I.A.Chalcopyrite CuGaxIn1–xSe2 thin films produced by laser-assisted evaporation. Jpn. J. Appl. Phys. 32, 90 (1993)CrossRefGoogle Scholar
11.Lachab, M., Attia, A.A., Llinares, C.Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges. J. Cryst. Growth 280, 474 (2005)CrossRefGoogle Scholar
12.Ning, Z., Da-Ming, Z., Gong, Z.An investigation on preparation of CIGS targets by sintering process. Mater. Sci. Eng., B 166, 34 (2010)CrossRefGoogle Scholar
13.Wada, T., Matsur, Y., Nomura, Y., Nakamura, Y., Miyamura, A., Chiba, Y., Yamada, A., Konage, M.Fabrication of Cu(In,Ga)Se2 thin films by a combination of mechanochemical and screen-printing/sintering processes. Phys. Status Solidi A 203, 2593 (2006)CrossRefGoogle Scholar
14.Jo, Y.H., Mohanty, B.C., Cho, Y.S.Crystallization and surface segregation in CuIn0.7Ga0.3Se2 thin films on Cu foils grown by pulsed laser deposition. Appl. Surf. Sci. 256, 6819 (2010)CrossRefGoogle Scholar
15.Scarfone, C., Norton, M.G., Carter, C.B., Li, J., Mayer, J.W.Characterization of BaTiO3 thin films deposited by pulsed-laser ablationSurface Chemistry and Beam-Solid Interactions edited by H.A. Atwater, F.A. Houle, and D.H. Loundes (Mater. Res. Soc. Symp. Proc. 201, Pittsburgh, PA 1991)183Google Scholar
16.Agostinelli, E., Kaciulis, S., Antisari, M.V.Great reduction of particulates in pulsed laser deposition of Ag–Co films by using a shaded off-axis geometry. Appl. Surf. Sci. 156, 143 (2000)CrossRefGoogle Scholar
17.Rau, U., Schock, H.W.Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells-recent achievements, current understanding, and future challenges. Appl. Phys. A 69, 131 (1999)CrossRefGoogle Scholar
18.Zhang, L., He, Q., Jiang, W.L., Liu, F.F., Li, C.J., Sun, Y.Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films. Sol. Energy Mater. Sol. Cells 93, 114 (2009)CrossRefGoogle Scholar
19.Mooney, G.D., Hermann, A.M., Tuttle, J.R., Albin, D.S., Noufi, R.The formation of CuInSe2 thin films by rapid thermal processing. Sol. Cells 30, 69 (1991)CrossRefGoogle Scholar
20.Tuttle, J.R., Albin, D.S., Noufi, R.Characterization of thin film CuInSe2 and CuGaSe2: The existence and identification of secondary phases. Sol. Cells 27, 231 (1989)CrossRefGoogle Scholar
21.Neumann, H.Relation between electrical properties and composition in CuInSe2 single crystals. Sol. Cells 28, 301 (1990)CrossRefGoogle Scholar
22.Hasan, S.M.F., Quadir, L., Begum, Kh.S., Subhan, M.A., Mannan, Kh.M.Dependence of the type of electrical conduction on the composition of CuInSe2-thin films. Vacuum 55, 17 (1999)CrossRefGoogle Scholar
23.Hasan, S.M.F., Subhan, M.A., Mannan, Kh.M.The optical and electrical properties of copper indium di-selenide thin films. Opt. Mater. 14, 329 (2000)CrossRefGoogle Scholar