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Preparation and crystal properties of thin InSb films for highly sensitive magnetoresistance elements

Published online by Cambridge University Press:  31 January 2011

Masaaki Isai ,
Toshiaki Fukunaka  and
Masahide Ohshita
Masaaki Isai
Affiliation:
College of Engineering, Shizuoka University, Hamamatsu 432, Shizuoka, Japan
Toshiaki Fukunaka
Affiliation:
College of Engineering, Shizuoka University, Hamamatsu 432, Shizuoka, Japan
Masahide Ohshita
Affiliation:
College of Engineering, Shizuoka University, Hamamatsu 432, Shizuoka, Japan
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Abstract

High electron mobility thin InSb films were prepared on mica substrates by conventional vacuum evaporation of InSb to obtain highly sensitive magnetoresistance (MR) elements. The 0.15–0.5 μm thick InSb films were prepared in the present work. An optimum evaporation programming pattern was obtained. The crystal properties of these InSb films of 0.2–0.3 μm were investigated using a transmission electron microscope. It was shown that films thinner than 0.2 μm were semitransparent and consisted of [111] oriented single-crystal films. The 0.15–0.3 μm thick InSb films are therefore most useful for low-cost MR elements because of their high element resistance, small temperature coefficient of electron mobility, and high sensitivity.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 4 , August 1986 , pp. 547 - 551
Copyright
Copyright © Materials Research Society 1986

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