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Position-selective growth of carbon nanotubes on Ni catalysts/Mo underlayers by thermal chemical vapor deposition

Published online by Cambridge University Press:  03 March 2011

Hiroki Okuyama ,
Nobuyuki Iwata  and
Hiroshi Yamamoto
Hiroki Okuyama*
Affiliation:
College of Science and Technology, Nihon University, Funabashi, Chiba 274-8501, Japan
Nobuyuki Iwata
Affiliation:
College of Science and Technology, Nihon University, Funabashi, Chiba 274-8501, Japan
Hiroshi Yamamoto
Affiliation:
College of Science and Technology, Nihon University, Funabashi, Chiba 274-8501, Japan
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Position-selective growth of carbon nanotubes (CNTs) and vertically aligned CNTs (VACNTs) on patterned metal were prepared using thermal chemical vapor deposition (TCVD) and direct current (DC) plasma-enhanced chemical vapor deposition. We propose a new position-controlling method of CNTs by controlling not only the position of Ni as a catalyst, but also the morphology of Mo as an underlayer for the catalysts. Selective growth of CNTs was achieved at the edges of the patterned metal using TCVD. The minimum width of selectively grown CNTs, approximately 2.6 μm, was approximately one-eightieth that of the patterned metal, 200 μm. The VACNTs were synthesized using the PECVD method, but the VACNTs grew throughout the patterned metal. A position-controlled method of CNT growth was demonstrated in optimum conditions of the TCVD.

Keywords

Chemical vapor deposition (CVD)NanoscaleSputtering
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 11 , November 2006 , pp. 2888 - 2893
Copyright
Copyright © Materials Research Society 2006

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References

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