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Polarity effect of electromigration on intermetallic compound formation in a Cu/Sn–9Zn/Cu sandwich

Published online by Cambridge University Press:  31 January 2011

Shih-Ming Kuo*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China; and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
Kwang-Lung Lin
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China; and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
*
a)Address all correspondence to this author.e-mail: [email protected]
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Abstract

This study investigated the polarity effect of electromigration (EM) on the interfacial intermetallic compounds (IMCs) (γ-Cu5Zn8, Cu6Sn5) formation at the anode and the cathode in a Cu/Sn-9Zn/Cu sandwich with a constant direct current density of 1.0 × 103 A/cm2 at 100 °C. The EM had different polarity effects on the nucleation and growth rates of the interfacial Cu5Zn8 IMC from those of Cu6Sn5 IMC. Upon current stressing, the growth rate of the Cu-Zn intermetallic compound (γ-Cu5Zn8) at the cathode interface was much faster than that at the anode. However, the nucleation and growth of the Cu6Sn5 IMC at the anode interface were enhanced, though retarded at the cathode, under the influence of electric current. The mechanism of EM-induced Cu6Sn5 IMC formation towards the anodic Cu is also discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Yeh, E.C.C., Choi, W.J., Tu, K.N., Elenius, P.Balkan, H.: Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80, 580 2002CrossRefGoogle Scholar
2Lee, T.Y., Tu, K.N.Frear, D.F.: Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization. J. Appl. Phys. 90, 4502 2001CrossRefGoogle Scholar
3Tu, K.N.: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451 2003CrossRefGoogle Scholar
4Salam, B., Ekere, N.N.Rajkumar, D.: Study of the interface microstructure of Sn–Ag–Cu lead-free solders and the effect of solder volume on intermetallic layer formation in Proceedings of the 51st Electronic Component & Technology Conference, (IEEE, Piscataway, NJ, 2001), 471Google Scholar
5Islam, R.A., Wu, B.Y., Alam, M.O., Chan, Y.C.Jillek, W.: Investigations on microhardness of Sn–Zn based lead-free solder alloys as replacement of Sn–Pb solder. J. Alloy Compd. 392, 149 2005CrossRefGoogle Scholar
6Islam, M.N., Chan, Y.C., Rizvi, M.J.Jillek, W.: Investigations of interfacial reactions of Sn–Zn based and Sn–Ag–Cu lead-free solder alloys as replacement for Sn–Pb solder. J. Alloy Compd. 400, 136 2005CrossRefGoogle Scholar
7Suganuma, K., Murata, T., Noguchi, H.Toyoda, Y.: Heat resistance of Sn–9Zn solder/Cu interface with or without coating. J. Mater. Res. 15, 884 2000CrossRefGoogle Scholar
8Date, M., Tu, K.N., Shoji, T., Fujiyoshi, M.Sato, K.: Interfacial reactions and impact reliability of Sn–Zn solder joints on Cu or electroless Au/Ni(P) bond-pads. J. Mater. Res. 19, 2887 2004CrossRefGoogle Scholar
9Lee, B.J., Hwang, N.M.Lee, H.M.: Prediction of interface reaction products between Cu and various solder alloys by thermodynamic calculation. Acta Mater. 45, 1867 1997CrossRefGoogle Scholar
10Lee, H.M., Yoon, S.W.Lee, B.J.: Thermodynamic prediction of interface phases at Cu/solder joints. J. Electron. Mater. 27, 1161 1998CrossRefGoogle Scholar
11Gan, H.Tu, K.N.: Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples. J. Appl. Phys. 97, 063514 2005CrossRefGoogle Scholar
12Chen, C.M.Chen, S.W.: Electromigration effect upon the Sn/Ag and Sn/Ni interfacial reactions at various temperatures. Acta Mater. 50, 2461 2002CrossRefGoogle Scholar
13Chen, C.M.Chen, S.W.: Electromigration effect upon the Sn–0.7wt%Cu/Ni and Sn–3.5wt%Ag/Ni interfacial reactions. J. Appl. Phys. 90, 1208 2001CrossRefGoogle Scholar
14Dyson, B.F., Anthony, T.R.Turnbull, D.: Interstitial diffusion of copper in tin. J. Appl. Phys. 38, 3408 1967CrossRefGoogle Scholar
15Huang, F.H.Huntington, H.B.: Diffusion of Sb124, Cd109, Sn113, and Zn65 in tin. Phys. Rev. B 9, 1479 1974CrossRefGoogle Scholar
16Huntington, H.B.Diffusion in Solids: Recent Developments, edited by A.S. Nowick and J.J. Burton Academic Press New York 1975 303CrossRefGoogle Scholar
17Kuo, S.M.Lin, K.L.: Microstructure evolution during electromigration between Sn–9Zn solder and Cu. J. Mater. Res. 22, 1240 2007CrossRefGoogle Scholar
18Zhang, X.F., Guo, J.D.Shang, J.K.: Abnormal polarity effect of electromigration on intermetallic compound formation in Sn–9Zn solder interconnect. Scripta Mater. 57, 513 2007CrossRefGoogle Scholar
19Mei, Z., Sunwoo, A.J.Morris, J.W.: Analysis of low-temperature intermetallic growth in copper-tin diffusion couples. Metall. Trans. A 23, 857 1992CrossRefGoogle Scholar
20Shohji, I., Nakamura, T., Mori, F.Fujiuchi, S.: Interface reaction and mechanical properties of lead-free Sn–Zn alloy/Cu joints. Mater. Trans. 43, 1797 2002CrossRefGoogle Scholar
21Chao, B., Chae, S.H., Zhang, X., Lu, K.H., Im, J.Ho, P.S.: Investigation of diffusion and electromigration parameters for Cu–Sn intermetallic compounds in Pb-free solders using simulated annealing. Acta Mater. 55, 2805 2007CrossRefGoogle Scholar