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Phonons correction of the energy and photoionization cross section in polar semiconductors and hollow nanoparticles

Published online by Cambridge University Press:  11 June 2020

Safae M'zerd
Affiliation:
Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat10000, Morocco
Abdelali Talbi
Affiliation:
Faculty of Sciences, Laboratory of Physics Condensed Matter LPMC, Ibn Tofail University, Kenitra14000, Morocco
Mouad Bikerouin
Affiliation:
Renewable Energy and Advanced Materials Laboratory, International University of Rabat, Rabat11100, Morocco
Mohamed El Haouari
Affiliation:
Centre Régional des Matiéres de l'Education et de Formation (CRMEF), Tanger90060, Morocco
Noreddine Aghoutane
Affiliation:
Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat10000, Morocco
Mohamed El-Yadri
Affiliation:
Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat10000, Morocco
Zhi-Hai Zhang
Affiliation:
College of Physics and Electronic Engineering, Yancheng Teachers University, Yancheng224007, China
Jian-Hui Yuan
Affiliation:
Department of Physics, Guangxi Medical University, Nanning530021, China
Mostafa Sadoqi
Affiliation:
Department of Physics, St John's University, Jamaica, NY11439, USA
Gen Long*
Affiliation:
Department of Physics, St John's University, Jamaica, NY11439, USA
El Mustapha Feddi*
Affiliation:
Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat10000, Morocco
*
a)Address all correspondence to these authors. e-mail: [email protected]
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Abstract

In this paper, we report a recent theoretical study of the calculation of the binding energy and photoionization cross section of a single dopant in a spherical hollow or core/shell quantum dot taking into account the interaction of the electron with longitudinal optical phonons. Using Frolich approach and Lee-low Pines transformation, we determine the impact of different parameters such as shell thickness and dopant position on the energy and optical response of a bound polaron for two types of ionic II–VI semiconductors CdTe and ZnSe with different phonon coupling constants. Regardless of the material used, the electron–phonon interaction visibly reduces binding energy. For photoionization cross section, a redshift of resonance peaks was found when the effect of phonons is taken into consideration or when the donor is moved away from the shell center. These calculations provide us insights when choosing between materials for optoelectronic applications.

Type
Invited Paper
Copyright
Copyright © Materials Research Society 2020

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