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Oxidation Behavior of TiAlN Barrier Layers with and without Thin Metal Overlayers for Memory Capacitor Applications

Published online by Cambridge University Press:  31 January 2011

Jaewon Song ,
Hye Ryeong Kim ,
Jaehoo Park ,
Seehwa Jeong  and
Cheol Seong Hwang
Jaewon Song
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
Hye Ryeong Kim
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
Jaehoo Park
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
Seehwa Jeong
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
Cheol Seong Hwang
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
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Abstract

The oxidation behavior of sputtered TiAlN thin-film barrier layers was studied by cross-section transmission electron microscopy. Bare 100-nm-thick TiAlN films on SiO2/Si began to oxidize from the surface after annealing in air for 10 min from about 550 °C. Annealing at 700 °C oxidized half of the layer thickness. A 100-nm-thick Pt overlayer on the barrier layer retarded macroscopic oxidation at 650 °C. However, a 10-nm-thick Pt overlayer accelerated oxidation as a result of the catalytic dissociation of O2 molecules to form O atoms, which oxidized the barrier layer at 550 °C to the same extent as without the thin Pt overlayer at 650 °C. The effects of other thin metal overlayers, such as Ru and Ir, were also investigated. Ru and Ir did not accelerate TiAlN oxidation due to the absence of catalytic activity.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 7 , July 2002 , pp. 1789 - 1794
Copyright
Copyright © Materials Research Society 2002

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References

Hwang, C.S., Park, S.O., Kang, C.S., Cho, H.J., Kang, H.K., Lee, S.I., and Lee, M.Y., Appl. Phys. Lett. 67, 2819 (1995).CrossRefGoogle Scholar
Aoyama, T., Yamazaki, S., and Imai, K., J. Electrochem. Soc. 145, 2961 (1998).CrossRefGoogle Scholar
Yamaguchi, H., Izuka, T., Koga, H., Takemura, K., Sone, S., Yabuta, H., Yamamichi, S., Lesaicherre, P-Y., Suzuki, M., Kojima, Y., Nakajima, K., Kasai, N., Sakuma, T., Kato, K., Miyasaka, Y., Yoshida, M., and Nishimoto, S., Proceedings of the International Electron Devices Meeting (IEEE, New York, 1996), p. 675.Google Scholar
Hieda, K., Eguchi, K., Fukushima, N., Aoyama, T., Natori, K., Kiyotoshi, M., Yamazaki, S., Izuha, M., Niwa, S., Fukuzimi, Y., Ishibashi, Y., Kohyama, Y., Arikado, T., and Okumura, K., Proceedings of the International Electron Devices Meeting (IEEE, New York, 1998), p. 807.Google Scholar
Lee, B.T., Yoo, C.Y., Lim, H.J., Kang, C.S., Park, H.B., Kim, W.D., Ju, S.H., Horii, H., Lee, K.J., Kim, H.W., Lee, S.I., and Lee, M.Y., Proceedings of the International Electron Devices Meeting (IEEE, New York, 1998), p. 815.Google Scholar
Hwang, C. S., J. Mater. Sci. Eng., B 56, 178 (1998).CrossRefGoogle Scholar
Abe, Y., Kawamura, M., Yanagisawa, H., and Sasaki, K., Jpn. J. Appl. Phys. 34, L1678 (1995).Google Scholar
Dhote, A.M., Auciello, O., Gruen, D.M., and Ramesh, R., Appl. Phys. Lett. 79, 800 (2001).Google Scholar
McIntyre, D., Greene, J. E., Hakansson, G., Sundgren, J-E., and Munz, W-D., J. Appl. Phys. 67, 1542 (1990).Google Scholar
Krauss, A.R., Auciello, O., Dhote, A.M., Im, J., Aggarwal, S., Ramesh, R., Irene, E.A., Gao, Y., and Mueller, A. H., Integr. Ferroelect. 32, 121 (2001).CrossRefGoogle Scholar
McIntyre, P.C. and Summerfelt, S.R., J. Appl. Phys. 82, 4577 (1997).Google Scholar
Summerfelt, S.R. (private communication).Google Scholar