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The origin of an anomalous, low 2θ peak in x-ray diffraction spectra of MoS2 films grown by ion beam assisted deposition

Published online by Cambridge University Press:  31 January 2011

D. N. Dunn ,
L. E. Seitzman  and
I. L. Singer
D. N. Dunn
Affiliation:
Naval Research Laboratory, Code 6176, Washington, DC 20375-3321
L. E. Seitzman
Affiliation:
Naval Research Laboratory, Code 6176, Washington, DC 20375-3321
I. L. Singer
Affiliation:
Naval Research Laboratory, Code 6176, Washington, DC 20375-3321
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Abstract

The origin of a previously reported anomalous low 2θ x-ray diffraction peak from MoS2 thin films grown by ion beam assisted deposition was investigated. The anomalous peak, observed in a film grown on Si(100), was removed by ion irradiating the film with 180 keV Ar++ ions to a dose of 1 × 1015 ions/cm2. Microstructures of the two films were investigated using x-ray diffraction and cross-section transmission electron microscopy. Diffraction data and bright-field images indicated that the low 2θ peak was due to a local interplanar expansion of the crystal structure normal to MoS2 basal planes. This expansion was attributed to molecular defects.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 5 , May 1997 , pp. 1191 - 1194
Copyright
Copyright © Materials Research Society 1997

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References

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