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Organic n-channels of substituted phthalocyanine thin films grown on smooth insulator surfaces for organic field effect transistors applications

Published online by Cambridge University Press:  03 March 2011

W. Michaelis ,
D. Wöhrle  and
D. Schlettwein
W. Michaelis
Affiliation:
Physical Chemistry 1, Institute of Pure and Applied Chemistry, University of Oldenburg, P.O. Box 2503, D-26111 Oldenburg, Germany, and Institute of Organic and Macromolecular Chemistry, University of Bremen, P.O. Box 330440, D-28334 Bremen, Germany
D. Wöhrle
Affiliation:
Institute of Organic and Macromolecular Chemistry, University of Bremen, P.O. Box 330440, D-28334 Bremen, Germany
D. Schlettwein*
Affiliation:
Physical Chemistry 1, Institute of Pure and Applied Chemistry, University of Oldenburg, P.O. Box 2503, D-26111 Oldenburg, Germany
*
a) Address all correspondence to this author. Present address: Justus-Liebig-University Giessen, Institute of Applied Physics, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.e-mail: [email protected]
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Abstract

Thin films of the perfluorinated phthalocyanines F16PcVO and F16PcCu were grown on insulator substrates by physical vapor deposition under high vacuum conditions to study their growth and electrical properties, analyzing them as possible candidates for n-type channel materials in organic field effect transistors. As insulator substrates, mica, amorphous SiO2, poly(styrene), poly(vinylchloride), poly(vinylcarbazole), poly(methylmetacrylate) and poly(vinylidenefluoride) were chosen, offering chemically different interactions with the molecules, degrees of order, and tribological characteristics. Optical absorption spectroscopy was used to analyze the alignment of the molecules relative to the substrates and the electronic coupling to adjacent molecules in the films. Electrical conduction measurements served to analyze the electronic coupling of the molecules parallel to the insulating substrates and to discuss the growth mode of films. Atomic force microscopy and scanning electron microscopy were chosen to study the morphology of the films. An inclined orientation at an average surface angle between 58° and 86° dependent on the different substrates was found for both F16Pc. In particular, on mica, thin conductive channels of the organic n-semiconductors could be formed at an average film thickness well below 10 nm at conductivities of up to 1.3 × 10-2 S cm-1. Conductive channels could also be formed on the different polymer substrates at, however, at least an order of magnitude smaller conductivity. Before these layers were formed on the polymers, semiconductor material diffused into the polymer substrates, dependent upon the substrate temperature during deposition relative to the glass transition temperature of the polymers. An influence of the viscous state of the polymer substrates was also seen on the intermolecular coupling detected in optical spectra. Based on these results, implications for the applicability of F16Pc as organic n-channels in organic field effect transistors are discussed.

Keywords

Thin filmElectronic structureNucleation & growth
Type
Articles—Organic Electronics Special Section
Information
Journal of Materials Research , Volume 19 , Issue 7 , July 2004 , pp. 2040 - 2048
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1.Horowitz, G.: Adv. Mater. 10, 365 (1998).3.0.CO;2-U>CrossRefGoogle Scholar
2.Guillaud, G., Simon, J. and Germain, J.P.: Coord. Chem. Rev. 178, 1433 (1998).CrossRefGoogle Scholar
3.Bao, Z.: Adv.Mater. 12, 227 (2000).3.0.CO;2-U>CrossRefGoogle Scholar
4.Bao, Z., Lovinger, A.J. and Brown, J.: J. Am. Chem. Soc. 120, 207 (1998).CrossRefGoogle Scholar
5.Peisert, H., Knupfer, M. and Fink, J.: Surface Science 515, 491 (2002).CrossRefGoogle Scholar
6.Schlettwein, D., Hesse, K., Gruhn, N.E., Lee, P.A., Nebesny, K.W. and Armstrong, N.R.J. Phys. Chem. B 105, 4791 (2001).CrossRefGoogle Scholar
7.Koma, A.: Prog. Cryst. Growth Charact. 30, 129 (1995).CrossRefGoogle Scholar
8.Schmidt, A., Chau, L.K., Back, A. and Armstrong, N.R. in Phthalocyanines: Properties and Applications IV; edited by Leznoff, C.C. and Lever, A.B.P. (VCH Weinheim, Germany, 1996)Google Scholar
9.Schlettwein, D. in Supramolecular Photosensitive and Electroactive Materials edited by Nalwa, H.S., (Academic Press, San Diego, CA, 2001)Google Scholar
10.Osso, J.O., Schreiber, F., Kruppa, V., Dosch, H., Garriga, M., Alonso, M.I. and Cerdeira, F.: Adv. Funct. Mat. 12, 455 (2002).3.0.CO;2-I>CrossRefGoogle Scholar
11.Schlettwein, D., Graaf, H., Meyer, J-P., Oekermann, T. and Jaeger, N.I.: J. Phys. Chem. B 103, 3078 (1999).CrossRefGoogle Scholar
12.Schlettwein, D., Hesse, K., Tada, H., Mashiko, S., Storm, U. and Binder, J.: Chem. Mater. 12, 989 (2000).CrossRefGoogle Scholar
13.Schlettwein, D., Tada, H. and Mashiko, S.: Langmuir 16, 2872 (2000).CrossRefGoogle Scholar
14.Michaelis, W., Kröger, R. and Schlettwein, D.: Langmuir (submitted)Google Scholar
15.Snow, A.W. in The Porphyrin Handbook, Vol 17, Phthalocyanines: Properties and Materials, edited by Kadish, K.M., Smith, K.M., and Guilard, R. (Academic Press, San Diego, CA, 2003)Google Scholar
16.Cook, M.J. and Chambrier, I. in The Porphyrin Handbook, Vol 17, Phthalocyanines: Properties and Materials, edited by Kadish, K.M., Smith, K.M., and Guilard, R. (Academic Press, San Diego, CA, 2003)Google Scholar
17.Bailey, S.W.: Micas, Reviews in Mineralogy, Vol. 13, (Min. Soc. America, 1984)CrossRefGoogle Scholar
18.Mak, T.: Crystallography in Modern Chemistry (Wiley, New York, 1992)Google Scholar
19.Hiller, S., Schlettwein, D., Armstrong, N.R. and Wöhrle, D.: J. Mater. Chem. 8, 945 (1998).CrossRefGoogle Scholar
20.Simon, J. and Andre, J-J.: Molecular Semiconductors: Photoelectrical Properties and Solar Cells (Springer, Berlin, Germany, 1985)CrossRefGoogle Scholar
21.Yamashita, A. and Hayashi, T.: Adv. Mater. 8, 791 (1996).CrossRefGoogle Scholar
22.Ziola, R.F., Griffith, C.H. and Troup, J.M.: J. Chem. Soc. Dalton Trans. 2300 (1980).Google Scholar
23.Alonso, M.I., Garriga, M., Osso, J.O., Schreiber, F., Barrena, E. and Dosch, H.: J. Chem. Phys. 119, 6335 (2003).CrossRefGoogle Scholar