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Nitriding of yttria-stabilized zirconia in atmospheric pressure microwave plasma

Published online by Cambridge University Press:  31 January 2011

R. Milani
Affiliation:
Universidade de Caxias do Sul, 95070-560 Caxias do Sul, RS, Brazil
T. Belmonte
Affiliation:
Institut Jean Lamour, Nancy-Université, CNRS, 54042 Nancy Cedex, France
G.V. Soares*
Affiliation:
Universidade de Caxias do Sul, 95070-560 Caxias do Sul, RS, Brazil
I.J.R. Baumvol
Affiliation:
Universidade de Caxias do Sul, 95070-560 Caxias do Sul, RS, Brazil; and Universidade Federal do Rio Grande do Sul, Instituto de Física, 91501-970 Porto Alegre, RS, Brazil
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

High temperature plasma nitriding of yttria-partially-stabilized zirconia in atmospheric pressure microwave plasma was investigated. The morphological, mechanical, and physicochemical characteristics of the resulting nitrided layer were characterized by different methods, such as optical and scanning electron microscopy, microindentation, x-ray diffraction, narrow resonant nuclear reaction profiling, secondary neutral mass spectrometry, and x-ray photoelectron spectroscopy, aiming at investigating the applicability of this highly efficient process for nitriding of ceramics. The structure of the plasma nitrided layer was found to be complex, composed of tetragonal and cubic zirconia, as well as zirconium nitride and oxynitride. The growth rate of the nitrided layer, 4 µm/min, is much higher than that obtained by any other previous nitriding process, whereas a typical 50% increase in Vickers hardness over that of yttria-partially-stabilized zirconia was observed.

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Articles
Copyright
Copyright © Materials Research Society 2009

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