Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-02T20:36:27.538Z Has data issue: false hasContentIssue false
  • English
  • Français

New approach in the monitoring and characterization of titanium nitride thin films

Published online by Cambridge University Press:  31 January 2011

S. Logothetidis ,
E. I. Meletis  and
G. Kourouklis
S. Logothetidis
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
E. I. Meletis
Affiliation:
Mechanical Engineering Department, Materials Science and Engineering Program, Louisiana State University, Baton Rouge, Louisiana 70803
G. Kourouklis
Affiliation:
Physics Division, School of Technology, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
Get access

Abstract

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 2 , February 1999 , pp. 436 - 441
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Meletis, E. I., J. Mater. Eng. 11, 159 (1989).CrossRefGoogle Scholar
2.Arai, T., Fujita, H., and Watanabe, M., Thin Solid Films 154, 387 (1987).CrossRefGoogle Scholar
3.Wittmer, M., J. Vac. Sci. Technol. A 3, 1797 (1985).CrossRefGoogle Scholar
4.Dimitriadis, C. A., Logothetidis, S., and Alexandrou, I., Appl. Phys. Lett. 66, 502 (1995).CrossRefGoogle Scholar
5.Chen, W.D., Bender, H., Vandervorst, W., and Maes, H. E., Surf. Interface Anal. 12, 151 (1988).CrossRefGoogle Scholar
6.Vasile, M. J., Emerson, A. B., and Baiocchi, F. A., J. Vac. Sci. Technol. A 8, 99 (1990).CrossRefGoogle Scholar
7.Logothetidis, S., Alexandrou, I., and Papadopoulos, A., J. Appl. Phys. 77, 1043 (1995), and references therein.CrossRefGoogle Scholar
8.Adjaottor, A. A., Meletis, E. I., Logothetidis, S., Alexandrou, I., and Kokkou, S., Surf. Coat. Technol. 76–77, 142 (1995).CrossRefGoogle Scholar
9.Francois, J. C., Chassaing, G., Gravier, P., Pierrisnard, R., and Bonnt, A. M., Thin Solid Films 127, 205 (1985);CrossRefGoogle Scholar
Szczyrbowski, V.J., Rogels, S., Kastner, A., Dietrich, A., and Harting, K., Vakuum Technik 37, 14 (1988).Google Scholar
10.Dawson, P.T. and Tzatzov, K.K., Surf. Sci. 149, 105 (1985).CrossRefGoogle Scholar
11.Porte, L., Roux, L., and Hanus, J., Phys. Rev. B 28, 3214 (1983).CrossRefGoogle Scholar
12.Pecz, B., Frangis, N., Logothetidis, S., Alexandrou, I., Barna, P., and Stoemenos, J., Thin Solid Films 268, 57 (1995).CrossRefGoogle Scholar
13. See, for example, The Optical Properties of Solids, Proceedings of the International School of Physics (ENRICO FERMI), course XXXIV, edited by J. Tauc (Academic, New York, 1966), p. 106.Google Scholar
14.Petrov, I., Hultman, L., Sudgren, J-E., and Greene, J. E., J. Vac. Sci. Technol. A 10, 265 (1992).CrossRefGoogle Scholar
15.Spengler, W. and Kaiser, R., Solid State Commun. 18, 881 (1976).CrossRefGoogle Scholar
16.Kourouklis, G. and Logothetidis, S. (unpublished results).Google Scholar
17.Begun, G. M. and Bamberger, C. E., Appl. Spectros. 43, 134 (1989).CrossRefGoogle Scholar
18.Logothetidis, S. and Barborica, A., Microelectronic Eng. 33, 309 (1997).CrossRefGoogle Scholar
19.Spengler, W., Kaiser, R., Christensen, A.N., and Muller-Vogt, G., Phys. Rev. B 17, 1095 (1978).CrossRefGoogle Scholar
20.Michailescu, I. N., Chitica, N., Nistor, L.C., Popescu, M., Theodorescu, V. S., Ursu, I., Andrei, A., Barborica, A., Luches, A., Luisa De Giorgi, M., Perrone, A., Dubreil, B., and Hermann, J., J. Appl. Phys. 74 (9), 5781 (1993).CrossRefGoogle Scholar
21.Aspnes, D. E., Thin Solid Films 89, 249 (1982);CrossRefGoogle Scholar
Logothetidis, S., J. Appl. Phys. 65, 2416 (1989).CrossRefGoogle Scholar
22.Lemperiere, G. and Poitevin, J. M., Thin Solid Films 111, 339 (1984).CrossRefGoogle Scholar
23.Logothetidis, S., Meletis, E. I., Stergioudis, G., and Adjaottor, A.A., Thin Solid Films (Dec. 1998).Google Scholar