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Morphology of Si nanocrystallites embedded in SiO2 matrix

Published online by Cambridge University Press:  31 January 2011

V.S. Teodorescu ,
M.L. Ciurea ,
V. Iancu  and
M-G. Blanchin
V.S. Teodorescu
Affiliation:
National Institute of Materials Physics, Bucharest-Magurele R-077125, Romania
M.L. Ciurea*
Affiliation:
National Institute of Materials Physics, Bucharest-Magurele R-077125, Romania
V. Iancu
Affiliation:
Department of Physics, University “Politehnica” of Bucharest, Bucharest R-060042, Romania
M-G. Blanchin
Affiliation:
Université Claude Bernard Lyon 1, Laboratoire de Physique de la Matière Condensée et Nanostructures (PMCN), Centre National de la Recherche Scientifique (CNRS) UMR 5586, 69622 Villeurbanne Cedex, F-69000 France
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si0.5(SiO2)0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x ⩾ 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties.

Keywords

NanostructureSiTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 11 , November 2008 , pp. 2990 - 2995
Copyright
Copyright © Materials Research Society 2008

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