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Morphology and electrical transport in pentacene films on silylated oxide surfaces

Published online by Cambridge University Press:  03 March 2011

Karthik Shankar  and
Thomas N. Jackson
Karthik Shankar*
Affiliation:
Center for Thin Film Devices, Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802
Thomas N. Jackson
Affiliation:
Center for Thin Film Devices, Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

A study comparing the morphology and electrical transport properties of pentacene films on underlayers of different self-assembled monolayers (SAMs) is presented. The SAMs studied as underlayers were phenyltrichlorosilane, n-octadecyltrichlorosilane, and t-butyldiphenylchlorosilane. Pentacene thin films were grown by vacuum sublimation on SiO2 surfaces treated with self-assembled monolayers. During deposition, substrates were held at a temperature of 70 °C. The morphologies of the films at different stages of deposition were studied by atomic force microscopy, and the transport properties of the films were characterized by I-V measurements in a simple field-effect transistor (FET) structure. The SAM underlayers strongly influence the film morphology in the first few molecular layers and hence significantly impact the electrical transport in the resulting FETs.

Keywords

Scanning probe microscopy (SPM)OrganicSemiconductor
Type
Articles—Organic Electronics Special Section
Information
Journal of Materials Research , Volume 19 , Issue 7 , July 2004 , pp. 2003 - 2007
Copyright
Copyright © Materials Research Society 2004

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References

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