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Molecular-Dynamics Analysis of Interfacial Diffusion Between High-Permittivity Gate Dielectrics And Silicon Substrates

Published online by Cambridge University Press:  03 March 2011

T. Iwasaki
T. Iwasaki
Affiliation:
Mechanical Engineering Research Laboratory, Hitachi, Ltd. 502 Kandatsu, Tsuchiura,Ibaraki 300-0013, Japan
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Abstract

Interfacial oxygen diffusion from high-permittivity gate dielectrics (ZrO2 and HfO2) into Si substrates in ultra-large-scale integrated circuits must be suppressed to prevent the formation of interfacial layers between the gate dielectrics and the Si substrates. Oxygen diffusion was analyzed by using a molecular dynamics technique that includes many-body interactions and charge transfer between different elements. The analysis results showed that the addition of Ti is effective in suppressing interfacial oxygen diffusion. The results also showed that the diffusion at the ZrO2/Si(111) and HfO2/Si(111) interfaces is much more suppressed than the diffusion at the ZrO2/Si(001) and HfO2/Si(001) interfaces.

Keywords

Thin filmDielectricDiffusion
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 4 , April 2004 , pp. 1197 - 1202
Copyright
Copyright © Materials Research Society 2004

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References

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