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Microstructure of QD-like clusters in GaAs/In(As,Bi) heterosystems

Published online by Cambridge University Press:  13 August 2018

Igor A. Likhachev ,
Igor N. Trunkin ,
Vladimir I. Tsekhosh ,
Grigory V. Prutskov ,
Ilia A. Subbotin ,
Alexey V. Klekovkin ,
Elkhan M. Pashaev ,
Alexander L. Vasiliev  and
Igor P. Kazakov
Igor A. Likhachev
Affiliation:
National Research Center “Kurchatov Institute”, Moscow 123182, Russia
Igor N. Trunkin
Affiliation:
National Research Center “Kurchatov Institute”, Moscow 123182, Russia
Vladimir I. Tsekhosh
Affiliation:
P.N. Lebedev Physical Institute Russian Academy of Sciences, Moscow 119991, Russia
Grigory V. Prutskov
Affiliation:
National Research Center “Kurchatov Institute”, Moscow 123182, Russia
Ilia A. Subbotin
Affiliation:
National Research Center “Kurchatov Institute”, Moscow 123182, Russia
Alexey V. Klekovkin
Affiliation:
P.N. Lebedev Physical Institute Russian Academy of Sciences, Moscow 119991, Russia; and Institute of Ultrahigh Frequency Semiconductor Electronics of Russian Academy of Sciences, Moscow 117105, Russia
Elkhan M. Pashaev
Affiliation:
National Research Center “Kurchatov Institute”, Moscow 123182, Russia
Alexander L. Vasiliev*
Affiliation:
National Research Center “Kurchatov Institute”, Moscow 123182, Russia; and Shubnikov Institute of Crystallography of FSRC “Crystallography and Photonics” RAS, Moscow 119333, Russia
Igor P. Kazakov
Affiliation:
P.N. Lebedev Physical Institute Russian Academy of Sciences, Moscow 119991, Russia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The microstructure of In(As,Bi)/GaAs heterostructures grown by low-temperature molecular beam epitaxy with special attention to the interfaces was studied by scanning/transmission electron microscopy, energy dispersive X-ray microanalysis, and X-ray diffraction and reflectivity. Two samples grown at similar conditions with and without the presence of the Bi-contained layer, formed at 350 °C, are considered. These samples were jointly analyzed to clarify Bi influence on the crystal structure. Two types of QD-like clusters at the GaAs/In(As,Bi) interface were found. The first type exhibited a zinc blend crystal structure, which is typical for A3B5 semiconductors. The second type adopted a tetragonal PbO crystal structure and was found in different orientations. The joint analysis by electron microscopy and X-ray methods demonstrated that the incorporation of Bi atoms into the InAs layer leads to the strain relaxation at the interface in the growth direction. According to electron microscopy data, this strain release is more pronounced around the clusters of the second type.

Keywords

Biscanning transmission electron microscopy (STEM)X-ray diffraction (XRD)
Type
Article
Information
Journal of Materials Research , Volume 33 , Issue 16 , 28 August 2018 , pp. 2342 - 2349
Copyright
Copyright © Materials Research Society 2018 

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