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Microstructure and thermoelectric properties of InSb compound with nonsoluble NiSb in situ precipitates

Published online by Cambridge University Press:  13 December 2013

Guangyu Jiang ,
Yi Chen ,
Tiejun Zhu ,
Xiaohua Liu  and
Xinbing Zhao
Guangyu Jiang
Affiliation:
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
Yi Chen
Affiliation:
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
Tiejun Zhu
Affiliation:
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China; and Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
Xiaohua Liu
Affiliation:
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
Xinbing Zhao*
Affiliation:
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China; and Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The microstructure and thermoelectric properties of InSb–NiSb composite system are investigated. NiSb, ranging from micro- to nanoscale, is introduced as a nonsoluble second phase in the InSb matrix by using the water quenching method. The morphology of the second phase is adjusted by varying the composition from hypoeutectic to hypereutectic alloys. The eutectic composite with a semiconducting InSb matrix and a metallic NiSb fiber on the order of 100-nm diameter is obtained. Melt spinning (MS) is applied to the eutectic composition to change the NiSb dispersion phase to around 200-nm diameter sphere. Transport properties, including Seebeck coefficient, resistivity, Hall coefficient, and thermal conductivity, are measured from 80 to 630 K. Compared to the water quenched (WQ) eutectic sample, the MS process results in a slight increase in the carrier concentration but a remarkable reduction in the mobility and thermal conductivity. Compared to the InSb matrix, ZT of the samples with the NiSb second phase is lower. For the eutectic samples, ZT is significantly reduced after the MS process because of the loss in mobility. ZT of the WQ InSb matrix is the highest in all the samples, ∼0.5 at 600 K.

Keywords

thermoelectricmicrostructuresecond phases
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 24 , 28 December 2013 , pp. 3394 - 3400
Copyright
Copyright © Materials Research Society 2013 

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