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The microstructure and creep deformation of hot-pressed Si3N4 with different amounts of sintering additives

Published online by Cambridge University Press:  31 January 2011

Sang-Young Yoon ,
Takashi Akatsu  and
Eiichi Yasuda
Sang-Young Yoon
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, 226, Japan
Takashi Akatsu
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, 226, Japan
Eiichi Yasuda
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, 226, Japan
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Abstract

Compressive creep deformation of hot-pressed silicon nitride with different amounts of grain boundary glassy phase was investigated at 1300–1400 °C under 30–100 MPa. The stress exponent of the creep rate was determined to be nearly unity. The apparent activation energy of silicon nitride with a larger amount of glassy phase was measured to be about 700 kJ/mole, and that with a smaller amount of glassy phase was found to be 400 kJ/mole. In addition, the microstructural observation found that no cavity appeared and grain boundary glass was recrystallized during creep test. Thus, the rate-limiting steps in solution/precipitation creep mechanism change from the solution-reprecipitation of Si3N4 grains to the diffusion through the grain boundary with increasing the amount of glassy phase.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 1 , January 1996 , pp. 120 - 126
Copyright
Copyright © Materials Research Society 1996

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