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The microstructural and optical properties of Ge/Si heterostructures grown by low-temperature molecular beam epitaxy

Published online by Cambridge University Press:  17 May 2013

Vladimir V. Roddatis ,
Sergey N. Yakunin ,
Alexander L. Vasiliev ,
Mikhail V. Kovalchuk ,
Alexej Yu Seregin ,
Timur M. Burbaev  and
Michail N. Gordeev
Vladimir V. Roddatis
Affiliation:
CIC energiGUNE, Albert Einstein 48, Miñano 01510, Álava, Spain
Sergey N. Yakunin
Affiliation:
NRC Kurchatov Institute, pl. akademika Kurchatova, 1, 123182, Moscow, Russia
Alexander L. Vasiliev*
Affiliation:
NRC Kurchatov Institute, pl. akademika Kurchatova, 1, 123182, Moscow, Russia
Mikhail V. Kovalchuk
Affiliation:
NRC Kurchatov Institute, pl. akademika Kurchatova, 1, 123182, Moscow, Russia
Alexej Yu Seregin
Affiliation:
Shubnikov Institute of Crystallography RAS, Leninsky pr. 59, 117333, Moscow, Russia
Timur M. Burbaev
Affiliation:
Lebedev Physical Institute RAS, Leninsky pr. 53, 119991, Moscow, Russia
Michail N. Gordeev
Affiliation:
Lebedev Physical Institute RAS, Leninsky pr. 53, 119991, Moscow, Russia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Multilayer Si/Ge heterostructures with the thickness of Ge layers varying from 2 to 12 monolayers (MLs) were formed by molecular beam epitaxy on the (001) Si substrates at 300 °C (Ge) and 450 °C (Si). Using conventional and aberration corrected scanning transmission electron microscopy, x-ray reflectometry and x-ray standing waves, a thorough study of the Si/Ge heterostructures was performed. Optical properties of the heterostructures were probed by photoluminescence spectroscopy. It is shown that the growth of Ge layers up to a thickness of 5 ML occurs through the Frank–van der Merwe mechanism. For thicker Ge layers the growth mechanism of the Si–Ge heterostructure changes to Stranski–Krastanov with Si–Ge islands having the shape of inverted pyramids. We discuss the intermixing of Si and Ge due to stress induced interdiffusion. An explanation of the influence of the observed structural peculiarities on the PL spectra of the heterostructures is given.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 11 , 14 June 2013 , pp. 1432 - 1441
Copyright
Copyright © Materials Research Society 2013 

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References

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