Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-24T21:00:24.379Z Has data issue: false hasContentIssue false
  • English
  • Français

Micromechanical modeling of ferroelectric films

Published online by Cambridge University Press:  01 March 2006

J.E. Huber
J.E. Huber*
Affiliation:
Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, United Kingdom
*
a) Address all correspondence to this author. e-mail: [email protected] This paper was selected as the Outstanding Meeting Paper for the 2005 MRS Spring Meeting Symposium CC Proceedings, Vol. 881E.
Get access

Abstract

Ferroelectric films are growing in significance as non-volatile memory devices, sensors, and microactuators. The stress state of the film, induced by processing or constraints such as the substrate, strongly affects device behavior. Thus, it is important to be able to model the coupled and constrained behavior of film material. This work presents a preliminary study of the application of micromechanical modeling to ferroelectric films. A self-consistent micromechanics model developed for bulk ferroelectrics is adapted for thin film behavior by incorporating several features of the microstructure, mechanical clamping by the substrate, residual stresses, and the crystallographic orientation of the film.

Keywords

FerroelectricFilmSimulation
Type
Outstanding Meeting Papers
Information
Journal of Materials Research , Volume 21 , Issue 3 , March 2006 , pp. 557 - 562
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Spierings, G.A.C.M., Dormans, G.J.M., Moors, W.G.J., Ulenaers, M.J.E., Larsen, P.K.: Stress in Pt/Pb(Zr,Ti)O3/Pt thin-film stacks for integrated ferroelectric capacitors. J. Appl. Phys. 78, 1926 (1995).CrossRefGoogle Scholar
2.Huber, J.E., Fleck, N.A., Landis, C.M., McMeeking, R.M.: A constitutive model for ferroelectric polycrystals. J. Mech. Phys. Solids 47, 1663 (1999).Google Scholar
3.Huber, J.E., Fleck, N.A.: Multi-axial electrical switching of a ferroelectric: Theory versus experiment. J. Mech. Phys. Solids 49, 785 (2001).CrossRefGoogle Scholar
4.Huber, J.E., Fleck, N.A.: Ferroelectric switching: A micromechanics model versus measured behaviour. Eur. J. Mech. 23, 203 (2004).CrossRefGoogle Scholar
5.Lian, L., Sottos, N.R.: Effects of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films. J. Appl. Phys. 87, 3941 (2000).CrossRefGoogle Scholar
6.Michelitsch, T., Levin, V.M.: Inclusions and inhomogeneities in electroelastic media with hexagonal symmetry. Eur. Phys. J. B. 14, 527 (2000).CrossRefGoogle Scholar
7.Merz, W.J.: Domain formation and domain-wall motions in ferroelectric BaTiO3 single crystals. Phys. Rev. 95, 690 (1954).CrossRefGoogle Scholar
8.Loge, R.E., Suo, Z.: Nonequilibrium thermodynamics of ferroelectric domain evolution. Acta Mater. 44, 3429 (1996).CrossRefGoogle Scholar
9.Ganpule, C.S., Nagarajan, V., Ogale, S.B., Roytburd, A.L., Williams, E.D., Ramesh, R.: Domain nucleation and relaxation kinetics in ferroelectric thin films. Appl. Phys. Lett. 77, 3275 (2000).CrossRefGoogle Scholar
10.Lo, V.C.: Simulation of thickness effect in thin ferroelectric films using Landau–Khalatnikov theory. J. Appl. Phys. 94, 3353 (2003).CrossRefGoogle Scholar
11.Dawber, M., Chandra, P., Littlewood, P.B., Scott, J.F.: Depolarization corrections to the coercive field in thin film ferroelectrics. J. Phys.: Condens. Matter 15, L393 (2003).Google Scholar
12.Larsen, P.K., Dormans, G.J.M., Taylor, D.J., Vanveldhoven, P.J.: Ferroelectric properties and fatigue of PbZr 0.51Ti0.49O3 thin-films of varying thickness–blocking layer model. J. Appl. Phys. 76, 2405 (1994).CrossRefGoogle Scholar