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Mechanism of diamond film growth by hot-filament CVD: Carbon-13 studies

Published online by Cambridge University Press:  31 January 2011

C. Judith Chu ,
Mark P. D'Evelyn ,
Robert H. Hauge  and
John L. Margrave
C. Judith Chu
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, Texas 77251-1892
Mark P. D'Evelyn
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, Texas 77251-1892
Robert H. Hauge
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, Texas 77251-1892
John L. Margrave
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, Texas 77251-1892
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Abstract

Mixed carbon-12/carbon-13 diamond films were synthesized by hot-filament chemical vapor deposition, using mixtures of 13CH4 and 12CH4 or 12C2H2 in H2. The first-order Raman peak at 1332 cm−1 for 12C-diamond was found to shift by 50 cm−1 to 1282 cm−1 for pure 13C-diamond. For mixed-isotope films, the Raman peak frequency shifts linearly between these values as a function of the 13C mole fraction. The mechanism of diamond film growth by hot-filament CVD has been investigated by growth from mixtures of 13CH4 and 12C2H2, using the shifted Raman frequency to determine the relative incorporation rates of 13C and 12C into the film. The 13C mole fraction in the film agrees closely with the 13C mole fraction inferred for the methyl radical but differs substantially from that of acetylene, indicating that the methyl radical is the dominant growth precursor under the conditions studied.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2405 - 2413
Copyright
Copyright © Materials Research Society 1990

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