Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-09T16:17:48.102Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurement of small elastic strains in silicon using electron channeling patterns

Published online by Cambridge University Press:  31 January 2011

J. A. Kozubowski ,
W. W. Gerberich  and
T. Stefanski
J. A. Kozubowski
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
W. W. Gerberich
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
T. Stefanski
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
Get access

Abstract

A silicon single-crystal slab 0.15 mm in thickness was bent to produce small, nonuniform surface strains of the order of 0.2%. The electron channeling patterns were observed in a JSM 840 SEM (scanning electron microscope) at an accelerating voltage close to 25 kV. Proper choice of the triangles formed by intersecting channeling lines of zero-order and of higher-order Laue zones allows one to measure the changes in their dimensions caused by imposed strain. It was estimated that the lower limit of detectable elastic strain is close to 0.1%. The possibilities of using this method for estimation of the average elastic strains in thin epitaxial layers are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 4 , August 1988 , pp. 710 - 713
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Kossel, W.Gott. Nachr. Math. Phys. 1, 229 (1935).Google Scholar
2Lonsdale, K.Philos. Trans. R. Soc. London A 240, 219 (1947).Google Scholar
3Hoier, R.Acta Crystallogr. A 25, 516 (1969).CrossRefGoogle Scholar
4Olsen, A.J. Appl. Crystallogr. 9, 9 (1976).CrossRefGoogle Scholar
5Ecob, R. C.Ricks, R. A. and Porter, A. J.Scr. Metall. 16, 1085 (1982).CrossRefGoogle Scholar
6Kaufman, M. J.Pearson, D. D. and Fraser, H. L.Philos. Mag. A 54, 79 (1986).CrossRefGoogle Scholar
7Schulson, E. M.J. Appl. Phys. 42, 3894 (1971).CrossRefGoogle Scholar
8Booker, G. R.Pettit, H. R. and Joy, D. C.Scanning Electron Microscopy (IITRI, Chicago, 1973), p. 140.Google Scholar
9Davidson, D. L.J. Mater. Sci. Lett. 1, 236 (1982).CrossRefGoogle Scholar
10Davidson, D. L.Int. Met. Rev. 29, 75 (1984).CrossRefGoogle Scholar
11Vicario, E.Pitaval, M. and Fontaine, G.Acta Crystallogr. A 27, 1 (1971).CrossRefGoogle Scholar
12Madden, M. C. and Hren, J. J.J. Microg. (GB) 139, 1 (1985).Google Scholar
13Marthinsen, K. and Mer, R., Acta Crystallogr. A 42, 484 (1986).CrossRefGoogle Scholar
14Kaczorowski, M. and Gerberich, W. W.Mat. Lett. 4 (5), (6), (7), 244 (1986).CrossRefGoogle Scholar
15Wright, A. Ph.D. thesis University of Minnesota, 1987.Google Scholar
16Godwod, K.Kowalczyk, R. and Szmid, Z.Phys. Status Solidi A 21, 227 (1971).CrossRefGoogle Scholar