Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-24T18:39:08.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurement of electromigration parameters of lead-free SnAg3.5 solder using U-groove lines

Published online by Cambridge University Press:  03 March 2011

Ying-Chao Hsu ,
De-Chung Chen ,
P.C. Liu  and
Chih Chen
Ying-Chao Hsu
Affiliation:
National Chiao Tung University, Department of Material Science and Engineering,Hsin-chu 300, Taiwan, Republic of China
De-Chung Chen
Affiliation:
National Chiao Tung University, Department of Material Science and Engineering,Hsin-chu 300, Taiwan, Republic of China
P.C. Liu
Affiliation:
National Chiao Tung University, Department of Material Science and Engineering,Hsin-chu 300, Taiwan, Republic of China
Chih Chen*
Affiliation:
National Chiao Tung University, Department of Material Science and Engineering,Hsin-chu 300, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Measurement of electromigration parameters in the lead-free solder SnAg3.5 was carried out by utilizing U-groove solder lines and atomic force microscopy in the temperature range of 100–150 °C. The drift velocity was measured, and the threshold current densities of the SnAg3.5 solder were estimated to be 4.4 × 104 A/cm2 at 100 °C, 3.3 × 104 A/cm2 at 125 °C, and 5.7 × 103 A/cm2 at 150 °C. These values represent the maximum current densities that the SnAg3.5 solder can carry without electromigration damage at the three stressing temperatures. The critical products for the SnAg3.5 solder were estimated to be 462 A/cm at 100 °C, 346 A/cm at 125 °C, and 60 A/cm at 150 °C. In addition, the electromigration activation energy was determined to be 0.55 eV in the temperature range of 100–150 °C. These values are very fundamental for current carrying capability and mean-time-to-failure measurement for solder bumps. This technique enables the direct measurement of electromigration parameters of solder materials.

Keywords

ElectromigrationPackaging
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 10 , October 2005 , pp. 2831 - 2837
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tu, K.N., Gusak, A.M. and Li, M.: Physics and materials challenges for lead-free solders. J. Appl. Phys. 93, 1335 (2003).CrossRefGoogle Scholar
2Suraski, D. and Seelig, K.: The current status of lead-free solder alloys. IEEE Trans. Electron. Pack. Mfg. 24, 244 (2001).CrossRefGoogle Scholar
3Zeng, K. and Tu, K.N.: Six cases of reliability issues of Pb-free solder joints in electronic packaging technology. Mater. Sci. Eng. Rep. R38, 55 (2002).CrossRefGoogle Scholar
4Tu, K.N.: Recent advances on electromigration in very-largescale-integration of interconnects. J. Appl. Phys. 94, 5451 (2003).CrossRefGoogle Scholar
5Choi, W.J., Yeh, E.C.C. and Tu, K.N.: Mean-time-to-failure study of flip chip solder joints on Cu/Ni(V)/Al thin-film under-bump-metallization. J. Appl. Phys. 94, 5665 (2003).CrossRefGoogle Scholar
6Lee, T.Y., Tu, K.N. and Frear, D.R.: Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization. J. Appl. Phys. 90, 4502 (2001).CrossRefGoogle Scholar
7Jang, S.Y., Wolf, J., Kwon, W.S., and Paik, K.W.: UBM (under bump metallization) study for Pb-free electroplating bumping: Interface reaction and electromigration, in Proceedings of the 52nd Electronic Components and Technology Conference, San Diego, CA (IEEE Components, Packaging, and Manufacturing Technology Society, IEEE, New York, 2002), p. 1213.Google Scholar
8Hsu, Y.C., Shao, T.L., Yang, C.J. and Chen, C.: Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr–Cu/Cu under-bump metallization. J. Electron. Mater. 32, 1222 (2003).CrossRefGoogle Scholar
9Wu, J.D., Lee, C.W., Zheng, P.J., Lee, C.B.J., and Li, S.: Electromigration reliability of SnAgxCuy flip chip interconnects, in Proceedings of the 54th Electronic Components and Technology Conference, Las Vegas, NV, (IEEE Components, Packaging, and Manufacturing Technology Society, IEEE, New York, 2004), p. 961.Google Scholar
10Lin, J.K., Jang, J.W., and White, J.: Characterization of solder joint electromigration for flip chip technology, in Proceedings of the 54th Electronic Components and Technology Conference, New Orleans, LA, (IEEE Components, Packaging, and Manufacturing Technology Society, IEEE, New York, 2003), p. 816.Google Scholar
11Shao, T.L., Chiu, S.H., Chen, C., Yao, D.J. and Hsu, C.Y.: Thermal gradient in solder joints under electrical current stressing. J. Electron. Mater. 33, 1350 (2004).CrossRefGoogle Scholar
12Huntigton, H.B. and Grone, A.R.: Current-induced marker motion in gold wires. J. Phys. Chem. Solids 20, 76 (1961).CrossRefGoogle Scholar
13Shao, T.L., Chen, Y.H., Chiu, S.H. and Chen, C.: Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni(P)/Au metallization pads. J. Appl. Phys. 96, 4518 (2004).CrossRefGoogle Scholar
14Shao, T.L., Liang, S.W., Lin, T.C. and Chen, C.: Three dimensional simulation on current density distribution in flip-chip solder joints under electrical current stressing. J. Appl. Phys. 98, 044509 (2005).CrossRefGoogle Scholar