Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-28T09:38:28.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurement of electromigration activation energy in eutectic SnPb and SnAg flip-chip solder joints with Cu and Ni under-bump metallization

Published online by Cambridge University Press:  31 January 2011

Hsiao-Yun Chen  and
Chih Chen
Chih Chen*
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Electromigration activation energy is measured by a built-in sensor that detects the real temperature during current stressing. Activation energy can be accurately determined by calibrating the temperature using the temperature coefficient of resistivity of an Al trace. The activation energies for eutectic SnAg and SnPb solder bumps are measured on Cu under-bump metallization (UBM) as 1.06 and 0.87 eV, respectively. The activation energy mainly depends on the formation of Cu–Sn intermetallic compounds. On the other hand, the activation energy for eutectic SnAg solder bumps with Cu–Ni UBM is measured as 0.84 eV, which is mainly related to void formation in the solder.

Keywords

Packaging
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 9 , September 2010 , pp. 1847 - 1853
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA 2003)Google Scholar
2.Tu, K.N.Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451 (2003)CrossRefGoogle Scholar
3.Zhang, L., Ou, S.Q., Huang, J., Tu, K.N., Gee, S., Nguyen, L.Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip-chip solder joints. Appl. Phys. Lett. 88, 012106 (2006)Google Scholar
4.Ouyang, F.Y., Chen, K., Tu, K.N., Lai, Y.S.Effect of current crowding on whisker growth at the anode in flip chip solder joints. Appl. Phys. Lett. 91, 231919 (2007)Google Scholar
5.Shao, T.L., Chen, Y.H., Chiu, S.H., Chen, C.Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr–Cu/Cu and Ni(P)/Au metallization pads. J. Appl. Phys. 96, 4518 (2004)Google Scholar
6.Chiu, S.H., Chen, C.Investigation of void nucleation and propagation during electromigration of flip-chip solder joints using x-ray microscopy. Appl. Phys. Lett. 89, 262106 (2006)CrossRefGoogle Scholar
7.Lin, Y.H., Tsai, C.M., Hu, Y.C., Lin, Y.L., Kao, C.R.Electromigration induced failure in flip-chip solder joints. J. Electron. Mater. 34, 27 (2005)CrossRefGoogle Scholar
8.Chiu, S.H., Shao, T.L., Chen, C.Infrared microscopy of hot spots induced by Joule heating in flip-chip SnAg solders joints under accelerated electromigration. Appl. Phys. Lett. 88, 022110 (2006)CrossRefGoogle Scholar
9.Choi, W.J., Yeh, E.C.C., Tu, K.N.Mean-time-to-failure study of flip-chip solder joints on Cu/Ni(V)/Al thin-film under-bump-metallization. J. Appl. Phys. 94, (9)5665 (2003)CrossRefGoogle Scholar
10.Chae, S.H., Zhang, X.F., Lu, K.H., Chao, H.L., Ho, P.S., Ding, M., Su, P., Uehling, T., Ramanathan, L.N.Electromigration lifetime statistics for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packagesProceedings of the 56th Electronic Components and Technology Conference (IEEE, Los Alamitos, CA 2006)650Google Scholar
11.Lai, Y.S., Chen, K.M., Kao, C.L., Lee, C.W., Chiu, Y.T.Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. Microelectron. Reliab. 47, 1273 (2007)CrossRefGoogle Scholar
12.Lee, J.H., Lim, G.T., Park, Y.B., Yang, S.T., Suh, M.S., Chung, Q.H., Byun, K.Y.Electromigration characteristics of flip chip Sn-3.5Ag solder bumps under highly accelerated conditions. J. Korean Phys. Soc. 54, (5)1784 (2008)Google Scholar
13.Gee, S., Kelkar, N., Huang, J., Tu, K.N.Lead-free and PbSn bump electromigration testingProceedings of IPACK 2005 (ASME, New York 2005)Google Scholar
14.Chang, Y.W., Liang, S.W., Chen, C.Study of void formation due to electromigration in flip-chip solder joints using Kelvin bump probes. Appl. Phys. Lett. 89, 032103 (2006)CrossRefGoogle Scholar
15.Zeng, K., Tu, K.N.Six cases of reliability study of Pb-free solder joints in electronic packaging technology. Mater. Sci. Eng., R 38, 55 (2002)CrossRefGoogle Scholar
16.Chou, C.K., Chen, C.A., Liang, S.W., Chen, C.Redistribution of Pb-rich phase during electromigration in eutectic SnPb solder stripes. J. Appl. Phys. 99, 054502 (2006)CrossRefGoogle Scholar
17.Lee, T.Y., Choi, W.J., Tu, K.N., Jang, J.W., Kuo, S.M., Lin, J.K., Frea, D.R., Zeng, K., Kivilahti, J.K.Morphology, kinetics, and thermodynamics of solid-state aging of eutectic SnPb and Pb-free solders (Sn–3.5Ag, Sn–3.8Ag–0.7Cu and Sn–0.7Cu) on Cu. J. Mater. Res. 17, (2)291 (2002)CrossRefGoogle Scholar
18.Alam, M.O., Chan, Y.C.Solid-state growth kinetics of Ni3Sn4 at the Sn–3.5Ag solder/Ni interface. J. Appl. Phys. 98, 123527 (2005)CrossRefGoogle Scholar