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Low Loss Dielectrics in Ba[(Mg1/3Ta2/3)1−xTix]O3 and Ba[(Mg1−xZnx)1/3Ta2/3]O3 Systems

Published online by Cambridge University Press:  03 March 2011

Kuzhichalil Peethambaran Surendran  and
Mailadil Thomas Sebastian
Kuzhichalil Peethambaran Surendran
Affiliation:
Ceramic Technology Division, Regional Research Laboratory, Trivandrum 695 019, India
Mailadil Thomas Sebastian
Affiliation:
Ceramic Technology Division, Regional Research Laboratory, Trivandrum 695 019, India
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Abstract

The microwave dielectric properties of ceramics based on Ba[(Mg1/3Ta2/3)1−xTix]O3 (BMT-BT) and Ba[(Mg1−xZnx)1/3Ta2/3]O3 (BMT-BZT) were investigated as a function of composition x. In BMT-BT solid solution, the dielectric properties deteriorated with increasing concentration of Ti substitution at the B-site of BMT. A correlation was established between the quality factors of the solid solution phases and their tolerance factor. In BMT-BZT solid solution, where both the end compounds are ordered perovskites, the unit cell expands with increasing mole fraction of the Zn in Mg site of BMT while the dielectric constant increases monotonously from 24.8 (for BMT) to 29.7 (BZT). In BMT-BZT solid solution, the quality factor reaches a maximum (Qu·f = 109,900 GHz) for 60 mol/ of BZT.

Keywords

CeramicFirmingSintering
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 11 , November 2005 , pp. 2919 - 2926
Copyright
Copyright © Materials Research Society 2005

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References

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