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Kinetics of borosilicate glass deposition

Published online by Cambridge University Press:  03 March 2011

Joseph J. Biernacki ,
Pravin Kannan ,
Harry Meyer  and
Criag Blue
Joseph J. Biernacki*
Affiliation:
Tennessee Technological University, Cookeville, Tennessee 38505
Pravin Kannan
Affiliation:
Tennessee Technological University, Cookeville, Tennessee 38505
Harry Meyer
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Criag Blue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The kinetics of borosilicate glass film deposition on silicon using boron nitride as a solid source was investigated. Experimental data on the thickness of deposited films as a function of temperature and process times under controlled atmospheric conditions was obtained. A 33-kW rapid thermal processing infrared furnace was used to minimize temperature and gas phase transients experienced on the commercial scale. The thickness and composition of the borosilicate glass films were measured using scanning Auger spectroscopy, and the thickness of the films as a function of time for various temperatures are presented. The results suggest a rapid transition to diffusion-controlled deposition with an activation energy of 2.77 ± 0.5 eV. The partial pressure of water vapor was found to have a potentially significant effect on the rate of film growth.

Keywords

GlassAuger electron spectroscopyDiffusion
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 3 , March 2004 , pp. 872 - 879
Copyright
Copyright © Materials Research Society 2004

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References

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