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Investigations into the slip behavior of zirconium diboride

Published online by Cambridge University Press:  10 June 2016

Brett Hunter
Affiliation:
Department of Metallurgical & Materials Engineering, University of Alabama, Tuscaloosa, AL 35405
Xiao-Xiang Yu
Affiliation:
Department of Metallurgical & Materials Engineering, University of Alabama, Tuscaloosa, AL 35405
Nicholas De Leon
Affiliation:
Department of Metallurgical & Materials Engineering, University of Alabama, Tuscaloosa, AL 35405
Christopher Weinberger
Affiliation:
Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA 19104
William Fahrenholtz
Affiliation:
Department of Materials Science & Engineering, Missouri S&T, Rolla, MO 65401
Greg Hilmas
Affiliation:
Department of Materials Science & Engineering, Missouri S&T, Rolla, MO 65401
Mark L. Weaver
Affiliation:
Department of Metallurgical & Materials Engineering, University of Alabama, Tuscaloosa, AL 35405
Gregory B. Thompson*
Affiliation:
Department of Metallurgical & Materials Engineering, University of Alabama, Tuscaloosa, AL 35405
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The slip systems in ZrB2 flexural tested at 1000 °C and 1500 °C have been quantified. The dislocations in both samples were long and straight with a dislocation density of approximately 1013 m−2. The structure of the dislocations as well as the low density is in agreement with a ceramic that is hard and brittle and dislocation nucleation and motion is restricted. The low temperature slip systems were found to include c-prismatic slip— ${1 \mathord{\left/ {\vphantom {1 3}} \right. \kern-\nulldelimiterspace} 3}\left[ {0001} \right]\left( {\bar 1010} \right)$ —and a-pyramidal slip— ${1 \mathord{\left/ {\vphantom {1 3}} \right. \kern-\nulldelimiterspace} 3}\left[ {11\bar 20} \right]\left( {\bar 1101} \right)$ whereas the elevated temperature sample revealed a-basal slip— ${1 \mathord{\left/ {\vphantom {1 3}} \right. \kern-\nulldelimiterspace} 3}\left[ {11\bar 20} \right]\left( {0001} \right)$ . Density functional theory Generalized Stacking Fault Energy curves for perfect slip were calculated and agreed well with geometric considerations for slip, including interplanar spacing and planar packing. Though basal slip has the lowest fault energy, the presence of the other dislocation types is suggestive that the activation barrier is not a hindrance for the temperatures studied and is likely activated to increase the number of plastic degrees of freedom.

Type
Focus Section: Reinventing Boron Chemistry and Materials for the 21st Century
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Upadhya, K., Yang, J.M., and Hoffman, W.P.: Materials for ultrahigh temperature structural applications. Am. Ceram. Soc. Bull. 76, 51 (1997).Google Scholar
Fahrenholtz, W.G., Hilmas, G.E., Talmy, I.G., and Zaykoski, J.A.: Refractory diborides of zirconium and hafnium. J. Am. Ceram. Soc. 90, 1347 (2007).Google Scholar
Kim, C., Gottstein, G., and Grummon, D.S.: Plastic flow and dislocation structures in tantalum carbide: Deformation at low and intermediate homologous temperatures. Acta Metall. Mater. 42, 2291 (1994).CrossRefGoogle Scholar
Campbell, I.E. and Sherwood, E.M.: High-Temperature Materials and Technology (John Wiley & Sons, Hoboken, 1967).Google Scholar
Steinitz, R.: Mechanical properties of refractory carbides at high temperatures. In Nuclear Applications of Nonfissional Ceramics, A. Boltax and J.H. Handwerk, eds. (American Nuclear Society, Hinsdale, 1966); p. 75.Google Scholar
De Leon, N., Wang, B., Weinberger, C.R., Matson, L.E., and Thompson, G.B.: Elevated-temperature deformation mechanisms in Ta2C: An experimental study. Acta Mater. 61, 3905 (2013).CrossRefGoogle Scholar
De Leon, N., Yu, X-X., Yu, H., Weinberger, C.R., and Thompson, G.B.: Bonding effects on the slip differences in the $B1$ monocarbides. Phys. Rev. Lett. 114, 165502 (2015).Google Scholar
Opeka, M.M., Talmy, I.G., Wuchina, E.J., Zaykoski, J.A., and Causey, S.J.: Mechanical, thermal, and oxidation properties of refractory hafnium and zirconium compounds. J. Eur. Ceram. Soc. 19, 2405 (1999).Google Scholar
Murata, Y.: Cutting Tool Tips and Ceramics Containing Hafniium Nitride and Zircondium Diboride (Carborundum Co., Niagara Falls, 1970).Google Scholar
Paul, A., Jayaseelan, D.D., Venugopal, S., Zapata-Solvas, E., Binner, J., Vaidhyanathan, B., Heaton, A., Brown, P., and Lee, W.E.: UHTC composites for hypersonic applications. Am. Ceram. Soc. Bull. 91, 22 (2012).Google Scholar
Norasetthekul, S., Eubank, P.T., Bradley, W.L., Bozkurt, B., and Stucker, B.: Use of zirconium diboride copper as an electrode in plasma applications. J. Mater. Sci. 34, 1261 (1999).CrossRefGoogle Scholar
Ghosh, D., Subhash, G., and Bourne, G.R.: Room-temperature dislocation activity during mechanical deformation of polycrystalline ultra-high-temperature ceramics. Scr. Mater. 61, 1075 (2009).CrossRefGoogle Scholar
Neuman, E.W., Hilmas, G.E., and Fahrenholtz, W.G.: Strength of zirconium diboride to 2300 °C. J. Am. Ceram. Soc. 96, 47 (2013).Google Scholar
Watts, J., Hilmas, G., Fahrenholtz, W.G., Brown, D., and Clausen, B.: Measurement of thermal residual stresses in ZrB2–SiC composites. J. Eur. Ceram. Soc. 31, 1811 (2011).Google Scholar
Haggerty, J.S. and Lee, D.W.: Plastic deformation of ZrB2 single crystals. J. Am. Ceram. Soc. 54, 572 (1971).Google Scholar
Ramberg, J.R. and Williams, W.S.: High temperature deformation of titanium diboride. J. Mater. Sci. 22, 1815 (1987).Google Scholar
Guo, S-Q.: Densification of ZrB2-based composites and their mechanical and physical properties: A review. J. Eur. Ceram. Soc. 29, 995 (2009).Google Scholar
Nakano, K., Matsubara, H., and Imura, T.: High-temperature hardness of IVa-diborides single crystals. J. Less-Common Met. 47, 259 (1976).Google Scholar
Vahldiek, F.W. and Mersol, S.A.: Slip and microhardness of IVa to via refractory materials. J. Less-Common Met. 55, 265 (1977).Google Scholar
Zhang, X., Luo, X., Han, J., Li, J., and Han, W.: Electronic structure, elasticity and hardness of diborides of zirconium and hafnium: First principles calculations. Comput. Mater. Sci. 44, 411 (2008).Google Scholar
Kresse, G. and Joubert, D.: From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B: Condens. Matter Mater. Phys. 59, 1758 (1999).Google Scholar
Kresse, G. and Furthmüller, J.: Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B: Condens. Matter Mater. Phys. 54, 11169 (1996).Google Scholar
Blöchl, P.E.: Projector augmented-wave method. Phys. Rev. B: Condens. Matter Mater. Phys. 50, 17953 (1994).Google Scholar
Perdew, J.P., Burke, K., and Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 (1996).CrossRefGoogle ScholarPubMed
Monkhorst, H.J. and Pack, J.D.: Special points for Brillouin-zone integrations. Phys. Rev. B: Condens. Matter Mater. Phys. 13, 5188 (1976).CrossRefGoogle Scholar
Neuman, E.W., Hilmas, G.E., and Fahrenholtz, W.G.: Mechanical behavior of zirconium diboride–silicon carbide–boron carbide ceramics up to 2200 °C. J. Eur. Ceram. Soc. 35, 463 (2015).Google Scholar
Neuman, E.W., Hilmas, G.E., and Fahrenholtz, W.G.: Elevated temperature strength enhancement of ZrB2-30 vol% SiC ceramics by postsintering thermal annealing. J. Am. Ceram. Soc. 99, 962 (2015).CrossRefGoogle Scholar
Williams, D.B. and Carter, C.B.: Transmission Electron Microscopy (Springer, USA, 2009).Google Scholar
Ham, R.K.: The determination of dislocation densities in thin films. Philos. Mag. 6, 1183 (1961).Google Scholar
Hull, D. and Bacon, D.J.: Chapter 1- defects in crystals. In Introduction to Dislocations, 5th ed., Hull, D. and Bacon, D.J., eds. (Butterworth-Heinemann, Oxford, 2011); p.1.Google Scholar