Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T20:14:54.563Z Has data issue: false hasContentIssue false
  • English
  • Français

Introduction

Published online by Cambridge University Press:  26 August 2011

Paul C. McIntyre ,
Volker Schmidt ,
Tom Picraux ,
Nathaniel Quitoriano ,
Heike Riel ,
Claes Thelander  and
Carl Thompson
Paul C. McIntyre
Affiliation:
Stanford University, Stanford, California 94305-4045
Volker Schmidt
Affiliation:
Max Planck Institute, D-06120 Halle, Germany
Tom Picraux
Affiliation:
Los Alamos National Laboratory, Los Alamos, New Mexico 87545-0001
Nathaniel Quitoriano
Affiliation:
McGill University, Montreal, QC H3A 2B2, Canada
Heike Riel
Affiliation:
IBM Research GmbH, CH-8803 Rueschlikon, Switzerland
Claes Thelander
Affiliation:
Lund University, SE-22100 Lund, Sweden
Carl Thompson
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4301
Get access

Abstract

An abstract is not available for this content so a preview has been provided. Please use the Get access link above for information on how to access this content.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
NANOWIRES: FUNDAMENTALS AND APPLICATIONS
Information
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2125 - 2126
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Schmidt, V., Wittemann, J.V., Senz, S., and Gösele, U.: Silicon nanowires: A review on aspects of their growth and their electrical properties. Adv. Mater. 21, 2681 (2009).CrossRefGoogle ScholarPubMed
2.Hiruma, K., Yazawa, M., Katsuyama, T., Ogawa, K., Haraguchi, K., Koguchi, M., and Kakibayashi, H.: Growth and optical properties of nanometer-scale GaAs and InAs whiskers. J. Appl. Phys. 77, 447 (1995).Google Scholar
3.Westwater, J., Gosain, D.P., Tomiya, S., Usui, S., and Ruda, H.: Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction. J. Vac. Sci. Technol. B 15, 554 (1997).CrossRefGoogle Scholar
4.Morales, A.M. and Lieber, C.M.: A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279, 208 (1998).Google Scholar
5.Wagner, R.S. and Ellis, W.C.: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89 (1964).Google Scholar
6.Ryu, S. and Cai, W.: Molecular dynamics simulations of gold-catalyzed growth of silicon bulk crystals and nanowires. J. Mater. Res. 26, 17 (2011).Google Scholar
7.Wallentin, J. and Borgström, M.T.: Doping of semiconductor nanowires. J. Mater. Res. 26, 17 (2011).CrossRefGoogle Scholar
8.Calarco, R., Stoica, T., Brandt, O., and Geelhaar, L.: Surface-induced effects in GaN nanowires. J. Mater. Res. 26, 17 (2011).Google Scholar