Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T03:28:49.726Z Has data issue: false hasContentIssue false
  • English
  • Français

Initial Oxidation Kinetics of Cu(100), (110), and (111) Thin Films Investigated by in Situ Ultra-high-vacuum Transmission Electron Microscopy

Published online by Cambridge University Press:  01 July 2005

Guangwen Zhou  and
Judith C. Yang
Guangwen Zhou*
Affiliation:
Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261
Judith C. Yang
Affiliation:
Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261
*
a)Address all correspondence to this author. Present address: Materials Science Division, Argonne National Laboratory, Argonne, IL 60439.e-mail: [email protected]
Get access

Abstract

The initial oxidation stages of Cu(100), (110), and (111) surfaces have been investigated by using in situ ultra-high-vacuum transmission electron microscopy (TEM) techniques to visualize the nucleation and growth of oxide islands. The kinetic data on the nucleation and growth of oxide islands shows a highly enhanced initial oxidation rate on the Cu(110) surface as compared with Cu(100), and it is found that the dominant mechanism for the nucleation and growth is oxygen surface diffusion in the oxidation of Cu(100) and (110). The oxidation of Cu(111) shows a dramatically different behavior from that of the other two orientations, and the in situ TEM observation reveals that the initial stages of Cu(111) oxidation are dominated by the nucleation of oxide islands at temperatures lower than 550 °C, and are dominated by two-dimensional oxide growth at temperatures higher than 550 °C. This dependence of the oxidation behavior on the crystal orientation and temperature is attributed to the structures of the oxygen-chemisorbed layer, oxygen surface diffusion, surface energy, and the interfacial strain energy.

Keywords

MetalOxidation/annealingTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 7 , July 2005 , pp. 1684 - 1694
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Wagner, C.: Beitrag zur theorie des anlaufvorgangs. Z. Phys. Chem. B21, 25 (1933).CrossRefGoogle Scholar
2Cabrera, N. and Mott, N.F.: Theory of the oxidation of metals. Rep. Prog. Phys. 12, 163 (1948).Google Scholar
3Holloway, P.H. and Hudson, J.B.: Kinetics of the reaction of oxygen with clean nickel single crystal surfaces. Surf. Sci. 43, 123 (1974).CrossRefGoogle Scholar
4Orr, W.H. Oxide nucleation and growth. Ph.D Thesis, Cornell University, Ithaca, NY, 1962.Google Scholar
5Yang, J.C., Yeadon, M., Kolasa, B. and Gibson, J.M.: Oxygen surface diffusion in three-dimensional Cu2O growth on Cu(001) thin films. Appl. Phys. Lett. 70, 3522 (1997).CrossRefGoogle Scholar
6Yang, J.C., Yeadon, M., Kolasa, B. and Gibson, J.M.: The homogeneous nucleation mechanism of Cu2O on Cu(001). Scripta Mater. 38, 1237 (1998).Google Scholar
7Thurmer, K., Williams, E. and Reutt-Robey, J.: Autocatalytic oxidation of lead crystallite surfaces. Science 297, 2033 (2002).CrossRefGoogle ScholarPubMed
8Marikar, P., Brodsky, M.B., Sowers, C.H. and Zaluzec, N.J.: In situ HVTEM studies of the early stages of oxidation of nickel and nickel chromium-alloys. Ultramicroscopy 29, 247 (1989).CrossRefGoogle Scholar
9Rakowski, J.M., Meier, G.H. and Pettit, F.S.: The effect of surface preparation on the oxidation behavior of gamma TiAl-base intermetallic alloys. Scripta Mater. 35, 1417 (1996).CrossRefGoogle Scholar
10Yang, J.C., Kolasa, B., Gibson, J.M. and Yeadon, M.: Self-limiting oxidation of copper. Appl. Phys. Lett. 73, 2841 (1998).CrossRefGoogle Scholar
11Zhou, G.W. and Yang, J.C.: Initial oxidation kinetics of copper (110) film investigated by in situ UHV-TEM. Surf. Sci. 531, 359 (2003).CrossRefGoogle Scholar
12Venables, J.A., Spiller, G.D.T. and Hanbuecken, M.: Nucleation and growth of thin films. Rep. Prog. Phys. 47, 399 (1984).CrossRefGoogle Scholar
13McDonald, M.L., Gibson, J.M. and Unterwald, F.C.: Design of an ultrahigh-vacuum specimen environment for high-resolution transmission electron microscopy. Rev. Sci. Instrum. 60, 700 (1989).CrossRefGoogle Scholar
14Zhou, G.W. and Yang, J.C.: Reduction of Cu2O islands grown on a Cu(100) surface through vacuum annealing. Phys. Rev. Lett. 93, 2261011 (2004).CrossRefGoogle ScholarPubMed
15Francis, S.M., Leibsle, F.M., Haq, S., Xiang, N. and Bowker, M.: Methanol oxidation on Cu(110). Surf. Sci. 315, 284 (1994).CrossRefGoogle Scholar
16Zhou, G.W. and Yang, J.C.: Temperature effects on the growth of oxide islands on Cu(110). Appl. Surf. Sci. 222, 357 (2004).CrossRefGoogle Scholar
17Zhou, G.W. and Yang, J.C.: In situ UHV-TEM investigation of the kinetics of initial stages of oxidation on the roughened Cu(110) surface. Surf. Sci. 559, 100 (2004).CrossRefGoogle Scholar
18Jacobsen, K.W. and Norskov, J.K.: Theory of the oxygen-induced restructuring of Cu(110) and Cu(100) surfaces. Phys. Rev. Lett. 65, 1788 (1990).Google Scholar
19Jensen, F., Besenbacher, F., Lagsgaard, E. and Stensgaard, I.: Dynamics of oxygen-induced reconstruction of Cu(100) studied by scanning tunneling microscopy. Phys. Rev. B 42, 9206 (1990).CrossRefGoogle ScholarPubMed
20Robinson, I.K., Vlieg, E. and Ferrer, S.: Oxygen-induced missing-row reconstruction of Cu(001) and Cu(001)-vicinal surfaces. Phys. Rev. B: Condens. Matter 42, 6954 (1990).CrossRefGoogle Scholar
21Johnston, S.M., Mulligan, A., Dhanak, V. and Kadodwala, M.: The structure of disordered chemisorbed oxygen on Cu(111). Surf. Sci. 519, 57 (2002).Google Scholar
22Jensen, F., Besenbacher, F., Lagsgaard, E. and Stensgaard, I.: Oxidation of Cu(111): Two new oxygen induced reconstructions. Surf. Sci. 259 L774 (1991).Google Scholar
23Jensen, F., Besenbacher, F. and Stensgaard, I.: Two new oxygen induced reconstruction on Cu (111). Surf. Sci. 269/270, 400 (1992).CrossRefGoogle Scholar
24Besenbacher, F. and Norskov, J.K.: Oxygen chemisorption on metal surfaces: general trends for Cu, Ni and Ag. Prog. Surf. Sci. 44, 5 (1993).CrossRefGoogle Scholar
25Matsumoto, T., Bennett, R.A., Stone, P., Yamada, T., Domen, K. and Bowker, M.: Scanning tunneling microscopy studies of oxygen adsorption on Cu(111). Surf. Sci. 471, 225 (2001).CrossRefGoogle Scholar
26Johnston, S.M., Mulligan, A., Dhanak, V. and Kadodwala, M.: The structure of disordered chemisorbed oxygen on Cu (111). Surf. Sci. 519, 57 (2002).Google Scholar
27Zhou, G.W. and Yang, J.C.: Formation of quasi-one-dimensional Cu2O structures by in situ oxidation of Cu(100). Phys. Rev. Lett. 89, 106101 (2002).CrossRefGoogle ScholarPubMed
28Tersoff, J. and Tromp, R.M.: Shape transition in growth of strained islands: Spontaneous formation of quantum wires. Phys. Rev. Lett. 70, 2782 (1993).CrossRefGoogle ScholarPubMed
29Foiles, S.M., Baskes, M.I. and Daw, M.S.: Embedded-atom-method functions for the fcc metals Cu, Ag, Au, Ni, Pd, Pt, and their alloys. Phys. Rev. B 33, 7983 (1986).CrossRefGoogle ScholarPubMed
30Zhou, G.W. and Yang, J.C.: Temperature effect on the Cu2O oxide morphology created by oxidation of Cu(001) as investigated by in situ UHV TEM. Appl. Surf. Sci. 210, 165 (2003).CrossRefGoogle Scholar
31Ross, F.M., Tersoff, J. and Tromp, R.M.: Coarsening of self-assembled Ge quantum dots on Si(001). Phys. Rev. Lett. 80, 984 (1998).Google Scholar
32Mederros-Ribeiro, G., Bratkovski, A.M., Kamins, T.I., Ohlberg, D.A.A. and Williams, R.S.: Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes. Science 279, 3534 (1998).Google Scholar
33Floro, J.A., Chason, E., Twesten, R.D., Hwang, R.Q. and Freund, L.B.: SiGe coherent islanding and stress relaxation in the high mobility regime. Phys. Rev. Lett. 79, 3946 (1997).CrossRefGoogle Scholar
34Tersoff, J. and LeGoues, F.K.: Competing relaxation mechanisms in strained layers. Phys. Rev. Lett. 72, 3570 (1994).CrossRefGoogle ScholarPubMed