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Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film

Published online by Cambridge University Press:  31 January 2011

Q.S. Zhu ,
Z.F. Zhang ,
Z.G. Wang  and
J.K. Shang
Q.S. Zhu
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Z.F. Zhang*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Z.G. Wang
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
J.K. Shang*
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
*
a) Address all correspondence to these authors. e-mail: [email protected]
b) Address all correspondence to these authors. e-mail: [email protected]
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Abstract

Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/SnBi interconnects. The presence of Ag film introduced Ag3Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu3Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface.

Keywords

Electronic materialEmbrittlementFatigue
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 1 , January 2008 , pp. 78 - 82
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Glazer, J.: Metallurgy of low-temperature Pb-free solders for electronic assembly. Int. Mater. Rev. 40, 65 1995CrossRefGoogle Scholar
2Zeng, K.Tu, K.N.: Six cases of reliability study of Pb-free solder joints in electronic packaging technology. Mater. Sci. Eng., R 38, 55 2002CrossRefGoogle Scholar
3Abtew, M.Selvaduray, G.: Lead-free solders in microelectronics. Mater. Sci. Eng., R 27, 95 2000CrossRefGoogle Scholar
4Plumbridge, W.J.: Solders in electronics. J. Mater. Sci. 31, 2501 1996CrossRefGoogle Scholar
5Vianco, P.T., Kilgo, A.C.Front, R.: Intermetallic compound layer growth by solid-state reaction between 58Bi–42Sn solder and copper. J. Electron. Mater. 24, 1493 1995CrossRefGoogle Scholar
6Mei, Z., Morris, J.W. Jr.: Characterization of eutectic Sn–Bi solder joints. J. Electron. Mater. 21, 599 1992CrossRefGoogle Scholar
7Takaku, Y., Liu, X.J., Ohnuma, I., Kainuma, R.Ishida, K.: Interfacial reaction and morphology between molten Sn base solders and Cu substrate. Mater. Trans. 45, 646 2004CrossRefGoogle Scholar
8Liu, P.L.Shang, J.K.: Interfacial segregation of bismuth in copper/tin-bismuth solder interconnect. Scripta Mater. 44, 1019 2001CrossRefGoogle Scholar
9Liu, P.L.Shang, J.K.: Interfacial embrittlement by bismuth segregation in copper/tin-bismuth Pb-free solder interconnect. J. Mater. Res. 16, 1651 2001CrossRefGoogle Scholar
10Siewert, T., Liu, S., Smith, D.R.Madeni, J.C.Properties of Lead-Free Solders National Institute of Standards and Technology Denver, CO September 2000Google Scholar
11Ghosh, G.: Dissolution and interfacial reactions of thin-film Ti/Ni/Ag metallizations in solder joints. Acta Mater. 49, 2609 2001CrossRefGoogle Scholar
12Zhu, Q.S., Zhang, Z.F., Shang, J.K.Wang, Z.G.: Fatigue damage mechanisms of copper single crystal/Sn–Ag–Cu interfaces. Mater. Sci. Eng., A 435–436, 588 2006CrossRefGoogle Scholar
13Yao, D.Shang, J.K.: Effect of aging on fatigue-crack growth at Sn–Pb/Cu interfaces. Metall. Mater. Trans. A 26A, 2677 1995CrossRefGoogle Scholar
14Luzzi, D.E., Yan, M., Sob, M.Vitek, V.: Atomic structure of a grain boundary in a metallic alloy: Combined electron microscope and theoretical study. Phys. Rev. Lett. 67, 1894 1991CrossRefGoogle Scholar
15Alber, U., Mullejans, H.Rühle, M.: Bismuth segregation at copper grain boundaries. Acta Mater. 47, 4047 1999CrossRefGoogle Scholar
16Duscher, G., Chisholm, M.F., Alber, U.Rühle, M.: Bismuth-induced embrittlement of copper grain boundaries. Nat. Mater. 3, 621 2004CrossRefGoogle ScholarPubMed
17Van Agterveld, D.T.L., Palasantzas, G.De Hosson, J.Th.M.: Effects of precipitates in Cu upon impact fracture: An ultra-high-vacuum study with local probe scanning auger/electron microscopy. Acta Mater. 48, 1995 2000CrossRefGoogle Scholar