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In situ study on Cu–Ni cross-interaction in Cu/Sn/Ni solder joints under temperature gradient

Published online by Cambridge University Press:  19 February 2016

Yi Zhong ,
Mingliang Huang ,
Haitao Ma ,
Wei Dong ,
Yunpeng Wang  and
Ning Zhao
Yi Zhong
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Mingliang Huang
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Haitao Ma
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Wei Dong
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Yunpeng Wang
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Ning Zhao*
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Synchrotron radiation real-time imaging technology was performed to in situ study the Cu–Ni cross-interaction in Cu/Sn/Ni solder joints under temperature gradient during soldering. The direction of temperature gradient significantly influenced the Cu–Ni cross-interaction. When Ni was the hot end, both Cu and Ni atoms could diffuse to the opposite interfaces, resulting in the occurrence of the Cu–Ni cross-interaction at both interfaces. The consumption of the Cu cold end was abnormally large, whereas that of the Ni hot end was limited. When Cu was the hot end, only Cu atoms could diffuse to the opposite interface, resulting in the occurrence of the Cu–Ni cross-interaction only at the cold end. The Cu hot end was seriously consumed, whereas the Ni cold end was still intact. The interfacial intermetallic compounds were always thicker at the cold end than at the hot end, especially at the Ni/Sn cold end. Cu imposed more damaging effect than Ni under temperature gradient. Based on the atomic fluxes, a model was proposed to discuss the effect of temperature gradient on the Cu–Ni cross-interaction and the interfacial reactions in the Cu/Sn/Ni solder joints.

Keywords

bondingcompoundpackaging
Type
Articles
Information
Journal of Materials Research , Volume 31 , Issue 5 , 14 March 2016 , pp. 609 - 617
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Wu, B.Q., Kumar, A., and Pamarthy, S.: High aspect ratio silicon etch: A review. J. Appl. Phys. 108, 20 (2010).CrossRefGoogle Scholar
Lau, J.H.: Overview and outlook of through-silicon via (TSV) and 3D integrations. Microelectron. Int. 28, 8–22 (2011).Google Scholar
Hsiao, H.Y., Liu, C.M., Lin, H.W., Liu, T.C., Lu, C.L., Huang, Y.S., Chen, C., and Tu, K.N.: Unidirectional growth of microbumps on (111)-oriented and nanotwinned copper. Science 336, 1007–1010 (2012).Google Scholar
Chen, W.H., Yu, C.F., Cheng, H.C., Tsai, Y.M., and Lu, S.T.: IMC growth reaction and its effects on solder joint thermal cycling reliability of 3D chip stacking packaging. Microelectron. Reliab. 53, 30–40 (2013).CrossRefGoogle Scholar
Hsu, H.H., Huang, Y.T., Huang, S.Y., Chang, T.C., and Wu, A.T.: Evolution of the intermetallic compounds in Ni/Sn–2.5Ag/Ni microbumps for three-dimensional integrated circuits. J. Electron. Mater. 44, 3888–3895 (2015).CrossRefGoogle Scholar
Zhan, C.J., Chuang, C.C., Juang, J.Y., Lu, S.T., and Chang, T.C.: Assembly and reliability characterization of 3D chip stacking with 30 μm pitch lead-free solder micro bump interconnection. In 60th Electronic Components and Technology Conference, Trewehella, J., ed. (IEEE: Las Vegas, 2010); pp. 1043–1049.Google Scholar
Fukushima, T., Ohara, Y., Murugesan, M., Bea, J.C., Lee, K.W., Tanaka, T., and Koyanagi, M.: Self-assembly technologies with high-precision chip alignment and fine-pitch microbump bonding for advanced die-to-wafer 3D integration. In 61st Electronic Components and Technology Conference, Dias, R., ed. (IEEE: Lake Buena Vista, 2011); pp. 2050–2055.Google Scholar
Chen, C., Hsiao, H.Y., Chang, Y.W., Ouyang, F.Y., and Tu, K.N.: Thermomigration in solder joints. Mater. Sci. Eng., R 73, 85–100 (2012).Google Scholar
Huang, J.R., Tsai, C.M., Lin, Y.W., and Kao, C.R.: Pronounced electromigration of Cu in molten Sn-based solders. J. Mater. Res. 23, 250–257 (2008).CrossRefGoogle Scholar
Lin, Y.H., Hu, Y.C., Tsai, C.M., Kao, C.R., and Tu, K.N.: In situ observation of the void formation and propagation mechanism in solder joints under current-stressing. Acta Mater. 53, 2029–2035 (2005).CrossRefGoogle Scholar
Chen, C., Tong, H.M., and Tu, K.N.: Electromigration and thermomigration in Pb-free flip-chip solder joints. Annu. Rev. Mater. Res. 40, 531–555 (2010).CrossRefGoogle Scholar
Ouyang, F.Y., Jhu, W.C., and Chang, T.C.: Thermal-gradient induced abnormal Ni3Sn4 interfacial growth at cold side in Sn2.5Ag alloys for three-dimensional integrated circuits. J. Alloys Compd. 580, 114–119 (2013).Google Scholar
Guo, M.Y., Lin, C.K., Chen, C., and Tu, K.N.: Asymmetrical growth of Cu6Sn5 intermetallic compounds due to rapid thermomigration of Cu in molten SnAg solder joints. Intermetallics 29, 155–158 (2012).Google Scholar
Qu, L., Zhao, N., Ma, H.T., Zhao, H., and Huang, M.L.: In situ study on the effect of thermomigration on intermetallic compounds growth in liquid-solid interfacial reaction. J. Appl. Phys. 115, 204907, (2014).Google Scholar
Zhao, N., Zhong, Y., Huang, M.L., Ma, H.T., and Dong, W.: Growth kinetics of Cu6Sn5 intermetallic compound at liquid-solid interfaces in Cu/Sn/Cu interconnects under temperature gradient. Sci. Rep. 5, 13491 (2015).CrossRefGoogle ScholarPubMed
Ho, C.E., Tsai, R.Y., Lin, Y.L., and Kao, C.R.: Effect of Cu concentration on the reactions between Sn–Ag–Cu solders and Ni. J. Electron. Mater. 31, 584–590 (2002).Google Scholar
Liu, C.S., Ho, C.E., Peng, C.S., and Kao, C.R.: Effects of joining sequence on the interfacial reactions and substrate dissolution behaviors in Ni/solder/Cu joints. J. Electron. Mater. 40, 1912–1920 (2011).Google Scholar
Wang, S.J. and Liu, C.Y.: Kinetic analysis of the interfacial reactions in Ni/Sn/Cu sandwich structures. J. Electron. Mater. 33, 1955–1960 (2006).CrossRefGoogle Scholar
Ho, C.E., Yang, S.C., and Kao, C.R.: Interfacial reaction issues for lead-free electronic solders. J. Mater. Sci.: Mater. Electron. 18, 155–174 (2007).Google Scholar
Lin, C.P. and Chen, C.M.: The cross-interactions in the Ni/Sn/Cu diffusion couples with an electroless palladium surface finish. J. Alloys Compd. 547, 37–42 (2013).CrossRefGoogle Scholar
Wu, W.H., Chung, H.L., Chen, B.Z., and Ho, C.E.: Critical current density for inhibiting (Cu,Ni)6Sn5 formation on the Ni side of Cu/solder/Ni joints. J. Electron. Mater. 39, 2653–2661 (2010).Google Scholar
Huang, Y.S., Hsiao, H.Y., Chen, C., and Tu, K.N.: The effect of a concentration gradient on interfacial reactions in microbumps of Ni/SnAg/Cu during liquid-state soldering. Scr. Mater. 66, 741–744 (2012).Google Scholar
Mohd Salleh, M.A.A., McDonald, S.D., Yasuda, H., Sugiyama, A., and Nogita, K.: Rapid Cu6Sn5 growth at liquid Sn/solid Cu interfaces. Scr. Mater. 100, 17–20 (2015).CrossRefGoogle Scholar
Qu, L., Ma, H.T., Zhao, H.J., Kunwar, A., and Zhao, N.: In situ study on growth behavior of interfacial bubbles and its effect on interfacial reaction during a soldering process. Appl. Surf. Sci. 305, 133–138 (2014).Google Scholar
Huang, M.L., Zhang, Z.J., Zhao, N., and Zhou, Q.: A synchrotron radiation real-time in situ imaging study on the reverse polarity effect in Cu/Sn–9Zn/Cu interconnect during liquid–solid electromigration. Scr. Mater. 68, 853–856 (2013).Google Scholar
Peralta-Martinez, M.V. and Wakeham, W.A.: Thermal conductivity of liquid tin and indium. Int. J. Thermophys. 22, 395–403 (2001).CrossRefGoogle Scholar
Incropera, F.P. and DeWitt, D.P.: Fundamentals of Heat and Mass Transfer (Wiley, New York, USA, 2001); pp. 929–934.Google Scholar
Huang, M.L., Zhang, Z.J., Ma, H.T., and Chen, L.D.: Different diffusion behavior of Cu and Ni undergoing liquid-solid electromigration. J. Mater. Sci. Technol. 30, 1235–1242 (2014).Google Scholar