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In situ observation of phase formation in a Cu–In–2Se precursor layer using micro-Raman scattering spectroscopy

Published online by Cambridge University Press:  31 January 2011

Deliang Wang ,
Yongsheng Cao  and
Lei Wan
Deliang Wang*
Affiliation:
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
Lei Wan
Affiliation:
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

In situ observation of phase formations in Cu–In–2Se (atomic ratio) precursor layers was carried out using temperature-dependent micro-Raman scattering spectroscopy. Without the protection of a high Se vapor pressure, intermediate In–Se and Cu–Se selenides and CuAu-ordered CuInSe2 (CIS) were easily formed in the amorphous precursor layer, which have atomic structures arranged in a way close to that of α-CIS. The binary selenides were transformed to the α-CIS by in-/out-diffusion of the mobile Cu and Se atoms/ions. The γ-CuSe and α-CIS began to form at a temperature as low as ∼170 °C.

Keywords

ElectrodepositionRaman spectroscopy
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 7 , July 2009 , pp. 2373 - 2377
Copyright
Copyright © Materials Research Society 2009

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