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Improvement of CuAlO2 thin film electrical conduction by the anisotropic conductivity

Published online by Cambridge University Press:  31 January 2011

Wei Lan ,
Ming Zhang ,
Guobo Dong ,
Yinyue Wang  and
Hui Yan
Wei Lan
Affiliation:
Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, People’s Republic of China; and Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People’s Republic of China
Ming Zhang*
Affiliation:
Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, People’s Republic of China
Guobo Dong
Affiliation:
Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, People’s Republic of China
Yinyue Wang
Affiliation:
Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People’s Republic of China
Hui Yan
Affiliation:
Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

CuAlO2 thin films with (015) preferential orientation growth have been synthesized on quartz substrates using radio frequency (rf) magnetron sputtering at low temperature. Via the optimized postannealing condition (in N2 preserved ambient at 900 °C for 5 h), the preferential orientation of the films changes from (015) to (001) direction. The use of a higher conductivity at the ab plane of CuAlO2 compared with that along the c axis, reduces the resistivity of the film at room temperature to 37 Ω·cm from that of the as-deposited, 4.62 × 104 Ω·cm. The positive Hall coefficient (+183.6 cm3/C) and the large mobility (4.07 cm2/V·s) suggest that CuAlO2 thin films are p-type semiconductors with good conduction path. The temperature dependence of conductivity indicates that CuAlO2 thin films obey a thermal-activation theory when the temperature is above 190 K, but below 185 K a two-dimension variable-range hopping mechanism becomes dominant.

Keywords

FilmElectrical propertiesAnnealing
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 12 , December 2007 , pp. 3338 - 3343
Copyright
Copyright © Materials Research Society 2007

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