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Improved stability of the ZnO varistor via donor and acceptor doping at the grain boundary

Published online by Cambridge University Press:  31 January 2011

T. K. Gupta  and
A. C. Miller
T. K. Gupta
Affiliation:
Ceramics Division, Alcoa Laboratories, Alcoa Center, Pennsylvania 10569
A. C. Miller
Affiliation:
Ceramics Division, Alcoa Laboratories, Alcoa Center, Pennsylvania 10569
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Abstract

The ZnO varistor degradation has been attributed to the field-assisted, temperature-activated diffusion of interstitial zinc in the depletion layer. To improve stability, one approach is to reduce the formation of interstitials, and then further, to prevent their migration through empty interstitial sites. Based on this concept, an amphoteric dopant, such as Na or K, has been incorporated in the ZnO varistor grain boundary wherein a dopant is substituted both in the lattice and in the interstitial sites. A grain boundary defect model has been developed for this dual mode of substitution, with the dopant acting as an acceptor at the lattice site and as a donor at the interstitial site. Under these conditions, and given a desired neutrality range, the concentration of zinc interstitial is indeed shown to be reduced and stability greatly improved. The experimental data presented here validate the grain boundary defect model presented in this and in an earlier paper [J. Mater. Sci. 20, 3487 (1985)].

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 4 , August 1988 , pp. 745 - 754
Copyright
Copyright © Materials Research Society 1988

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References

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